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379 Publications
2022 | Journal Article | LibreCat-ID: 35232
Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b). Published online 2022. doi:10.1002/pssb.202200508
LibreCat
| DOI
2022 | Journal Article | LibreCat-ID: 34056
Riedl T, Kunnathully VS, Verma AK, et al. Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics. 2022;132(18). doi:10.1063/5.0121559
LibreCat
| DOI
2022 | Journal Article | LibreCat-ID: 34053
Riedl T, Kunnathully V, Trapp A, Langer T, Reuter D, Lindner J. Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars. Advanced Materials Interfaces. 2022;9(11). doi:10.1002/admi.202102159
LibreCat
| DOI
2022 | Journal Article | LibreCat-ID: 36804
Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates. Journal of Crystal Growth. 2022;593. doi:10.1016/j.jcrysgro.2022.126756
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| DOI
2022 | Conference Paper | LibreCat-ID: 41800
Sartison M, Camacho Ibarra O, Jöns KD, Caltzidis I, Reuter D. Scalable integration of quantum emitters into photonic integrated circuits. 2022;2. doi:https://doi.org/10.1088/2633-4356/ac6f3e
LibreCat
| DOI
2022 | Journal Article | LibreCat-ID: 40523
Jonas B, Heinze DF, Schöll E, et al. Nonlinear down-conversion in a single quantum dot. Nature Communications. 2022;13(1). doi:10.1038/s41467-022-28993-3
LibreCat
| DOI
2022 | Research Data | LibreCat-ID: 40428
Jonas B, Heinze DF, Schöll E, et al. Nonlinear Down-Conversion in a Single Quantum Dot. LibreCat University; 2022. doi:10.5281/ZENODO.6024228
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| DOI
2021 | Journal Article | LibreCat-ID: 20592 | 
Henksmeier T, Eppinger M, Reineke B, Zentgraf T, Meier C, Reuter D. Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off. physica status solidi (a). 2021;218(3):2000408. doi:https://doi.org/10.1002/pssa.202000408
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2021 | Journal Article | LibreCat-ID: 22533
Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances. 2021. doi:10.1063/5.0053865
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| DOI
2021 | Journal Article | LibreCat-ID: 22003
Evers E, Kopteva NE, Yugova IA, et al. Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation. npj Quantum Information. 2021. doi:10.1038/s41534-021-00395-1
LibreCat
| DOI
2021 | Journal Article | LibreCat-ID: 22004
Schall J, Deconinck M, Bart N, et al. Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography. Advanced Quantum Technologies. 2021. doi:10.1002/qute.202100002
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| DOI
2021 | Journal Article | LibreCat-ID: 27099
Widhalm A, Krehs S, Siebert D, et al. Optoelectronic sampling of ultrafast electric transients with single quantum dots. Applied Physics Letters. 2021;119:181109. doi:10.1063/5.0061358
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2021 | Journal Article | LibreCat-ID: 46135
Schall J, Deconinck M, Bart N, et al. Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography. Advanced Quantum Technologies. 2021;4(6). doi:10.1002/qute.202100002
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| DOI
2021 | Journal Article | LibreCat-ID: 25227 |
Hajlaoui M, Ponzoni S, Deppe M, et al. Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports. 2021;11. doi:10.1038/s41598-021-98569-6
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2021 | Journal Article | LibreCat-ID: 23843
Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances. Published online 2021. doi:10.1063/5.0053865
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| DOI
2020 | Journal Article | LibreCat-ID: 17433
Wang DQ, Reuter D, Wieck AD, Hamilton AR, Klochan O. Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential. Applied Physics Letters. 2020. doi:10.1063/5.0009462
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| DOI
2020 | Journal Article | LibreCat-ID: 17434
Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner JKN. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020. doi:10.1016/j.jcrysgro.2020.125597
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| DOI
2020 | Journal Article | LibreCat-ID: 17435
Geier M, Freudenfeld J, Silva JT, et al. Electrostatic potential shape of gate-defined quantum point contacts. Physical Review B. 2020. doi:10.1103/physrevb.101.165429
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| DOI
2020 | Journal Article | LibreCat-ID: 17436
Javaid Iqbal M, Reuter D, Wieck AD, van der Wal C. Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure. The European Physical Journal Applied Physics. 2020. doi:10.1051/epjap/2020190202
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| DOI
2020 | Journal Article | LibreCat-ID: 17437
Ebler C, Labud PA, Rai AK, Reuter D, Wieck AD, Ludwig A. Electrical detection of excitonic states by time-resolved conductance measurements. Physical Review B. 2020. doi:10.1103/physrevb.101.125303
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