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45 Publications
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2023 | Journal Article | LibreCat-ID: 46132
Littmann, M., Reuter, D., & As, D. J. (2023). Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. Physica Status Solidi (b), 260(7). https://doi.org/10.1002/pssb.202300034
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2023 | Journal Article | LibreCat-ID: 46741
Zscherp, M. F., Jentsch, S. A., Müller, M. J., Lider, V., Becker, C., Chen, L., Littmann, M., Meier, F., Beyer, A., Hofmann, D. M., As, D. J., Klar, P. J., Volz, K., Chatterjee, S., & Schörmann, J. (2023). Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials & Interfaces, 15(33), 39513–39522. https://doi.org/10.1021/acsami.3c06319
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2023 | Journal Article | LibreCat-ID: 46573
Baron, E., Goldhahn, R., Espinoza, S., Zahradník, M., Rebarz, M., Andreasson, J., Deppe, M., As, D. J., & Feneberg, M. (2023). Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal of Applied Physics, 134(7). https://doi.org/10.1063/5.0153091
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2022 | Journal Article | LibreCat-ID: 35232
Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter, D., & As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. Physica Status Solidi (b), Article 2200508. https://doi.org/10.1002/pssb.202200508
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2021 | Journal Article | LibreCat-ID: 23842
Baron, E., Feneberg, M., Goldhahn, R., Deppe, M., Tacken, F., & As, D. J. (2021). Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system. Journal of Physics D: Applied Physics. https://doi.org/10.1088/1361-6463/abb97a
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2021 | Journal Article | LibreCat-ID: 25227 | 
Hajlaoui, M., Ponzoni, S., Deppe, M., Henksmeier, T., As, D. J., Reuter, D., Zentgraf, T., Springholz, G., Schneider, C. M., Cramm, S., & Cinchetti, M. (2021). Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports, 11, Article 19081. https://doi.org/10.1038/s41598-021-98569-6
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2021 | Journal Article | LibreCat-ID: 23843
Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., & As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances, Article 075013. https://doi.org/10.1063/5.0053865
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2020 | Journal Article | LibreCat-ID: 23838
Beloufa, A., Bouguenna, D., Kermas, N., & As, D. J. (2020). A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. Journal of Electronic Materials, 2008–2017. https://doi.org/10.1007/s11664-019-07927-8
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2020 | Journal Article | LibreCat-ID: 23840
Baron, E., Goldhahn, R., Deppe, M., As, D. J., & Feneberg, M. (2020). Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900522
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2020 | Journal Article | LibreCat-ID: 23841
Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2020). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900532
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