Please note that LibreCat no longer supports Internet Explorer versions 8 or 9 (or earlier).

We recommend upgrading to the latest Internet Explorer, Google Chrome, or Firefox.

45 Publications


2023 | Journal Article | LibreCat-ID: 46132
M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,” physica status solidi (b), vol. 260, no. 7, 2023, doi: 10.1002/pssb.202300034.
LibreCat | DOI
 

2023 | Journal Article | LibreCat-ID: 46741
M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN,” ACS Applied Materials & Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi: 10.1021/acsami.3c06319.
LibreCat | DOI
 

2023 | Journal Article | LibreCat-ID: 46573
E. Baron et al., “Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function,” Journal of Applied Physics, vol. 134, no. 7, 2023, doi: 10.1063/5.0153091.
LibreCat | DOI
 

2022 | Journal Article | LibreCat-ID: 35232
F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,” physica status solidi (b), Art. no. 2200508, 2022, doi: 10.1002/pssb.202200508.
LibreCat | DOI
 

2021 | Journal Article | LibreCat-ID: 23842
E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, and D. J. As, “Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system,” Journal of Physics D: Applied Physics, 2021.
LibreCat | DOI
 

2021 | Journal Article | LibreCat-ID: 25227 | OA
M. Hajlaoui et al., “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,” Scientific Reports, vol. 11, Art. no. 19081, 2021, doi: 10.1038/s41598-021-98569-6.
LibreCat | DOI | Download (ext.)
 

2021 | Journal Article | LibreCat-ID: 23843
F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” AIP Advances, Art. no. 075013, 2021, doi: 10.1063/5.0053865.
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 23838
A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,” Journal of Electronic Materials, pp. 2008–2017, 2020.
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 23840
E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” physica status solidi (b), 2020.
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 23841
M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), 2020.
LibreCat | DOI
 

Filters and Search Terms

(person=14)

status=public

Search

Filter Publications

Display / Sort

Citation Style: IEEE

Export / Embed