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91 Publications
1998 | Journal Article | LibreCat-ID: 7694
Tscheuschner RD, Hoch S, Leschinsky E, Meier C, Theis S, Wieck AD. Robustness of the Quantum Hall Effect, Sample Size Versus Sample Topology, and Quality Control Management of III–V Molecular Beam Epitaxy. International Journal of Modern Physics B. 1998;12(11):1147-1170. doi:10.1142/s0217979298000636
LibreCat
| DOI
1999 | Journal Article | LibreCat-ID: 7693
Eshlaghi S, Meier C, Suter D, Reuter D, Wieck AD. Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. Journal of Applied Physics. 1999;86(11):6605-6607. doi:10.1063/1.371720
LibreCat
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2000 | Journal Article | LibreCat-ID: 7691
Diaconescu D, Hoch S, Heidtkamp C, Meier C, Reuter D, Wieck AD. A new peak in the bend resistance of a four-terminal device written by FIB implantation. Physica B: Condensed Matter. 2000;284-288:1906-1907. doi:10.1016/s0921-4526(99)03002-1
LibreCat
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2000 | Conference Paper | LibreCat-ID: 7692
Reuter D, Meier C, Alvarez MA, Koch J, Wieck AD. Laterally resolved doping by focused ion beam implantation. In: IECON Proc. . ; 2000:1878.
LibreCat
2000 | Journal Article | LibreCat-ID: 7690
Heidtkamp C, Meier C, Reuter D, et al. Tunable backscattering in quantum Hall systems induced by neighbouring gates. Physica B: Condensed Matter. 2000;284-288:1728-1729. doi:10.1016/s0921-4526(99)02892-6
LibreCat
| DOI
2001 | Journal Article | LibreCat-ID: 8767
Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics Letters. 2001;79:377-379. doi:10.1063/1.1386618
LibreCat
| DOI
2002 | Journal Article | LibreCat-ID: 8737
Reuter D, Meier C, Seekamp A, Wieck A. Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. Physica E: Low-dimensional Systems and Nanostructures. 2002;13:938-941. doi:10.1016/s1386-9477(02)00239-4
LibreCat
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2002 | Journal Article | LibreCat-ID: 7684
Reuter D, Meier C, Riedesel C, Wieck AD. Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology. 2002;17(6):585-589. doi:10.1088/0268-1242/17/6/315
LibreCat
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2002 | Journal Article | LibreCat-ID: 7685
Rahm M, Raabe J, Pulwey R, et al. Planar Hall sensors for micro-Hall magnetometry. Journal of Applied Physics. 2002;91(10):7980. doi:10.1063/1.1453338
LibreCat
| DOI
2003 | Journal Article | LibreCat-ID: 7682
Riedesel C, Meier C, Schafmeister P, Reuter D, Wieck A. Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs. Physica E: Low-dimensional Systems and Nanostructures. 2003;17:503-504. doi:10.1016/s1386-9477(02)00849-4
LibreCat
| DOI