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91 Publications
1998 | Journal Article | LibreCat-ID: 7694
R. D. Tscheuschner, S. Hoch, E. Leschinsky, C. Meier, S. Theis, and A. D. Wieck, “Robustness of the Quantum Hall Effect, Sample Size Versus Sample Topology, and Quality Control Management of III–V Molecular Beam Epitaxy,” International Journal of Modern Physics B, vol. 12, no. 11, pp. 1147–1170, 1998.
LibreCat
| DOI
2000 | Conference Paper | LibreCat-ID: 7692
D. Reuter, C. Meier, M. A. Alvarez, J. Koch, and A. D. Wieck, “Laterally resolved doping by focused ion beam implantation,” in IECON Proc. , 2000, p. 1878.
LibreCat
2002 | Journal Article | LibreCat-ID: 7684
D. Reuter, C. Meier, C. Riedesel, and A. D. Wieck, “Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping,” Semiconductor Science and Technology, vol. 17, no. 6, pp. 585–589, 2002.
LibreCat
| DOI
2003 | Journal Article | LibreCat-ID: 7682
C. Riedesel, C. Meier, P. Schafmeister, D. Reuter, and A. . Wieck, “Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs,” Physica E: Low-dimensional Systems and Nanostructures, vol. 17, pp. 503–504, 2003.
LibreCat
| DOI