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33 Publications
2010 | Journal Article | LibreCat-ID: 4549
Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).
LibreCat
| DOI
E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).
2005 | Journal Article | LibreCat-ID: 21219
Mischbauweise sorgt für frischen Wind
G. Meschut, Konstruktion 04 (2005) 92–93.
LibreCat
G. Meschut, Konstruktion 04 (2005) 92–93.
2005 | Journal Article | LibreCat-ID: 8693
Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene
M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.
LibreCat
| DOI
M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.
2004 | Journal Article | LibreCat-ID: 8692
Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation
D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.
LibreCat
| DOI
D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.
2003 | Journal Article | LibreCat-ID: 8730
Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope
G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2003) 735–739.
LibreCat
| DOI
G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2003) 735–739.
2002 | Journal Article | LibreCat-ID: 21050
Lipirea în combinatie cu îmbinarile obtinute prin deformare
O. Hahn, M. Koyro, G. Meschut, Sudura 2 (2002) 10–13.
LibreCat
O. Hahn, M. Koyro, G. Meschut, Sudura 2 (2002) 10–13.
2002 | Journal Article | LibreCat-ID: 7684
Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping
D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology 17 (2002) 585–589.
LibreCat
| DOI
D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology 17 (2002) 585–589.
2002 | Journal Article | LibreCat-ID: 8747
Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat
| DOI
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
2002 | Journal Article | LibreCat-ID: 8768
Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat
| DOI
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
2001 | Conference Paper | LibreCat-ID: 21009
Hybridfügen – Grundlagen, Technologie, Anwendungen
G. Meschut, in: DVM-Bericht 668, Berlin, 2001, pp. 119–134.
LibreCat
G. Meschut, in: DVM-Bericht 668, Berlin, 2001, pp. 119–134.