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33 Publications


2010 | Journal Article | LibreCat-ID: 4549
Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon, U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology, 25(7). https://doi.org/10.1088/0268-1242/25/7/075003
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2005 | Journal Article | LibreCat-ID: 21219
Meschut, G. (2005). Mischbauweise sorgt für frischen Wind. Konstruktion, 04, 92–93.
LibreCat
 

2005 | Journal Article | LibreCat-ID: 8693
Knop, M., Richter, M., Maßmann, R., Wieser, U., Kunze, U., Reuter, D., … Wieck, A. D. (2005). Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science and Technology, 814–818. https://doi.org/10.1088/0268-1242/20/8/031
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2004 | Journal Article | LibreCat-ID: 8692
Kähler, D., Knop, M., Kunze, U., Reuter, D., & Wieck, A. D. (2004). Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology, 140–143. https://doi.org/10.1088/0268-1242/20/2/006
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2003 | Journal Article | LibreCat-ID: 8730
Apetrii, G., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2003). Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. Semiconductor Science and Technology, 735–739. https://doi.org/10.1088/0268-1242/17/7/317
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2002 | Journal Article | LibreCat-ID: 21050
Hahn, O., Koyro, M., & Meschut, G. (2002). Lipirea în combinatie cu îmbinarile obtinute prin deformare. Sudura, 2, 10–13.
LibreCat
 

2002 | Journal Article | LibreCat-ID: 7684
Reuter, D., Meier, C., Riedesel, C., & Wieck, A. D. (2002). Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology, 17(6), 585–589. https://doi.org/10.1088/0268-1242/17/6/315
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2002 | Journal Article | LibreCat-ID: 8747
Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 8768
Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
LibreCat | DOI
 

2001 | Conference Paper | LibreCat-ID: 21009
Meschut, G. (2001). Hybridfügen – Grundlagen, Technologie, Anwendungen. In DVM-Bericht 668 (Vol. 668, pp. 119–134). Berlin.
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