Please note that LibreCat no longer supports Internet Explorer versions 8 or 9 (or earlier).
We recommend upgrading to the latest Internet Explorer, Google Chrome, or Firefox.
33 Publications
2010 | Journal Article | LibreCat-ID: 4549
Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology. 2010;25(7). doi:10.1088/0268-1242/25/7/075003
LibreCat
| DOI
2005 | Journal Article | LibreCat-ID: 21219
Meschut G. Mischbauweise sorgt für frischen Wind. Konstruktion. 2005;04:92-93.
LibreCat
2005 | Journal Article | LibreCat-ID: 8693
Knop M, Richter M, Maßmann R, et al. Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science and Technology. 2005:814-818. doi:10.1088/0268-1242/20/8/031
LibreCat
| DOI
2004 | Journal Article | LibreCat-ID: 8692
Kähler D, Knop M, Kunze U, Reuter D, Wieck AD. Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology. 2004:140-143. doi:10.1088/0268-1242/20/2/006
LibreCat
| DOI
2003 | Journal Article | LibreCat-ID: 8730
Apetrii G, Fischer SF, Kunze U, Reuter D, Wieck AD. Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. Semiconductor Science and Technology. 2003:735-739. doi:10.1088/0268-1242/17/7/317
LibreCat
| DOI
2002 | Journal Article | LibreCat-ID: 21050
Hahn O, Koyro M, Meschut G. Lipirea în combinatie cu îmbinarile obtinute prin deformare. sudura. 2002;2:10-13.
LibreCat
2002 | Journal Article | LibreCat-ID: 7684
Reuter D, Meier C, Riedesel C, Wieck AD. Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology. 2002;17(6):585-589. doi:10.1088/0268-1242/17/6/315
LibreCat
| DOI
2002 | Journal Article | LibreCat-ID: 8747
Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
LibreCat
| DOI
2002 | Journal Article | LibreCat-ID: 8768
Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
LibreCat
| DOI
2001 | Conference Paper | LibreCat-ID: 21009
Meschut G. Hybridfügen – Grundlagen, Technologie, Anwendungen. In: DVM-Bericht 668. Vol 668. Berlin; 2001:119-134.
LibreCat
2000 | Book (Editor) | LibreCat-ID: 18121
Fromme J, Ganguin S, Iske S, Meister DM, Sander U, eds. Medienbildung und Gesellschaft. VS Verlag; 2000.
LibreCat
1999 | Conference Paper | LibreCat-ID: 20992
Koyro M, Meschut G. Eine quasistationäre Meßmethode zur Ermittlung der Wärmeleitfähigkeit polymerer Zwischenschichten in Abhängigkeit von der Temperatur. In: Tagungsband Zur Veranstaltung Werkstoffprüfung 1999. ; 1999:173-184.
LibreCat
1994 | Conference Paper | LibreCat-ID: 43450
Meier T, Koch M, Feldmann J, et al. Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures. In: Proceedings Der 8. International Winterschool on New Developments in Physics. Vol 9. Semiconductor science and technology. IOP Publishing; 1994:1965-1971. doi:10.1088/0268-1242/9/11S/018
LibreCat
| DOI
| Download (ext.)