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18 Publications


2012 | Journal Article | LibreCat-ID: 4104
Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J. Lindner, Journal of Crystal Growth 378 (2012) 291–294.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 7705
(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires
K. Trunov, D. Reuter, A. Ludwig, J.C.H. Chen, O. Klochan, A.P. Micolich, A.R. Hamilton, A.D. Wieck, Journal of Crystal Growth 323 (2010) 48–51.
LibreCat | DOI
 

2010 | Journal Article | LibreCat-ID: 4144
Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4214
The effects of annealing on non-polar (112¯0) a-plane GaN films
R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 13830
Understanding the cubic AlN growth plane from first principles
E. Rauls, J. Wiebe, W.G. Schmidt, Journal of Crystal Growth 312 (2010) 2892–2895.
LibreCat | DOI
 

2009 | Journal Article | LibreCat-ID: 4192
Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si
M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of Crystal Growth 312 (2009) 762–769.
LibreCat | Files available | DOI
 

2006 | Journal Article | LibreCat-ID: 7646
Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs
I. Regolin, D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner, G. Dumpich, C. Meier, A. Lorke, F.-J. Tegude, Journal of Crystal Growth 298 (2006) 607–611.
LibreCat | DOI
 

2006 | Journal Article | LibreCat-ID: 8664
Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)
J.L. Yang, D. Reuter, A.D. Wieck, Journal of Crystal Growth (2006) 278–284.
LibreCat | DOI
 

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