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19 Publications


2013 | Journal Article | LibreCat-ID: 3959
@article{Bürger_Kemper_Bader_Ruth_Declair_Meier_Förstner_As_2013, title={Cubic GaN quantum dots embedded in zinc-blende AlN microdisks}, volume={378}, DOI={10.1016/j.jcrysgro.2012.12.058}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Bürger, M. and Kemper, R.M. and Bader, C.A. and Ruth, M. and Declair, S. and Meier, Cedrik and Förstner, Jens and As, D.J.}, year={2013}, pages={287–290} }
LibreCat | Files available | DOI
 

2012 | Journal Article | LibreCat-ID: 4104
@article{Kemper_Hiller_Stauden_Pezoldt_Duschik_Niendorf_Maier_Meertens_Tillmann_As_et al._2012, title={Growth of cubic GaN on 3C–SiC/Si (001) nanostructures}, volume={378}, DOI={10.1016/j.jcrysgro.2012.10.011}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Hiller, L. and Stauden, T. and Pezoldt, J. and Duschik, K. and Niendorf, T. and Maier, H.J. and Meertens, D. and Tillmann, K. and As, D.J. and et al.}, year={2012}, pages={291–294} }
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 7705
@article{Trunov_Reuter_Ludwig_Chen_Klochan_Micolich_Hamilton_Wieck_2010, title={(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires}, volume={323}, DOI={10.1016/j.jcrysgro.2010.11.060}, number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Trunov, K. and Reuter, Dirk and Ludwig, A. and Chen, J.C.H. and Klochan, O. and Micolich, A.P. and Hamilton, A.R. and Wieck, A.D.}, year={2010}, pages={48–51} }
LibreCat | DOI
 

2010 | Journal Article | LibreCat-ID: 4144
@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010, title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323}, DOI={10.1016/j.jcrysgro.2010.12.042}, number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak, E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87} }
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2010 | Journal Article | LibreCat-ID: 4214
@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={10.1016/j.jcrysgro.2010.08.041}, number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 13830
@article{Rauls_Wiebe_Schmidt_2010, title={Understanding the cubic AlN growth plane from first principles}, volume={312}, DOI={10.1016/j.jcrysgro.2010.07.027}, journal={Journal of Crystal Growth}, author={Rauls, E. and Wiebe, J. and Schmidt, Wolf Gero}, year={2010}, pages={2892–2895} }
LibreCat | DOI
 

2009 | Journal Article | LibreCat-ID: 4192
@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si}, volume={312}, DOI={10.1016/j.jcrysgro.2009.12.048}, number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen, M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009}, pages={762–769} }
LibreCat | Files available | DOI
 

2006 | Journal Article | LibreCat-ID: 7646
@article{Regolin_Sudfeld_Lüttjohann_Khorenko_Prost_Kästner_Dumpich_Meier_Lorke_Tegude_2006, title={Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs}, volume={298}, DOI={10.1016/j.jcrysgro.2006.10.122}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Regolin, I. and Sudfeld, D. and Lüttjohann, S. and Khorenko, V. and Prost, W. and Kästner, J. and Dumpich, G. and Meier, Cedrik and Lorke, A. and Tegude, F.-J.}, year={2006}, pages={607–611} }
LibreCat | DOI
 

2006 | Journal Article | LibreCat-ID: 8664
@article{Yang_Reuter_Wieck_2006, title={Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)}, DOI={10.1016/j.jcrysgro.2006.05.051}, journal={Journal of Crystal Growth}, author={Yang, J.L. and Reuter, Dirk and Wieck, A.D.}, year={2006}, pages={278–284} }
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