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18 Publications


2002 | Journal Article | LibreCat-ID: 39882
Mankowski, V., Hilleringmann, U., & Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering, 53(1–4), 525–528. https://doi.org/10.1016/s0167-9317(00)00370-1
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 39879
Horstmann, J. T., Hilleringmann, U., & Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering, 53(1–4), 213–216. https://doi.org/10.1016/s0167-9317(00)00299-9
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 39919
Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., & Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering, 15(1–4), 289–292. https://doi.org/10.1016/0167-9317(91)90231-2
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 39920
Soennecken, A., Hilleringmann, U., & Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering, 15(1–4), 633–636. https://doi.org/10.1016/0167-9317(91)90299-s
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 39915
Hilleringmann, U., & Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering, 19(1–4), 211–214. https://doi.org/10.1016/0167-9317(92)90425-q
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 39916
Adams, S., Hilleringmann, U., & Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering, 19(1–4), 191–194. https://doi.org/10.1016/0167-9317(92)90420-v
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 39889
Mankowski, V., Hilleringmann, U., & Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering, 46(1–4), 413–417. https://doi.org/10.1016/s0167-9317(99)00122-7
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 39877
Hilleringmann, U., Vieregge, T., & Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering, 53(1–4), 569–572. https://doi.org/10.1016/s0167-9317(00)00380-4
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