NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN
W.-C. Cheng, S.-H. Chen, Y.-H. Chang, K.-H. Chen, J.-J. Chen, T.-Y. Chen, M.-C. Yang, W.-K. Shih, in: 2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA), IEEE, 2020.
Download
No fulltext has been uploaded.
Conference Paper
| Published
Author
Cheng, Wei-Chun;
Chen, Shuo-Han;
Chang, Yuan-Hao;
Chen, Kuan-Hsun;
Chen, Jian-Jia;
Chen, Tseng-Yi;
Yang, Ming-Chang;
Shih, Wei-Kuan
Publishing Year
Proceedings Title
2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA)
LibreCat-ID
Cite this
Cheng W-C, Chen S-H, Chang Y-H, et al. NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN. In: 2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA). IEEE; 2020. doi:10.1109/nvmsa51238.2020.9188172
Cheng, W.-C., Chen, S.-H., Chang, Y.-H., Chen, K.-H., Chen, J.-J., Chen, T.-Y., Yang, M.-C., & Shih, W.-K. (2020). NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN. 2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA). https://doi.org/10.1109/nvmsa51238.2020.9188172
@inproceedings{Cheng_Chen_Chang_Chen_Chen_Chen_Yang_Shih_2020, title={NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN}, DOI={10.1109/nvmsa51238.2020.9188172}, booktitle={2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA)}, publisher={IEEE}, author={Cheng, Wei-Chun and Chen, Shuo-Han and Chang, Yuan-Hao and Chen, Kuan-Hsun and Chen, Jian-Jia and Chen, Tseng-Yi and Yang, Ming-Chang and Shih, Wei-Kuan}, year={2020} }
Cheng, Wei-Chun, Shuo-Han Chen, Yuan-Hao Chang, Kuan-Hsun Chen, Jian-Jia Chen, Tseng-Yi Chen, Ming-Chang Yang, and Wei-Kuan Shih. “NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-Based FTL via NAND-SPIN.” In 2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA). IEEE, 2020. https://doi.org/10.1109/nvmsa51238.2020.9188172.
W.-C. Cheng et al., “NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN,” 2020, doi: 10.1109/nvmsa51238.2020.9188172.
Cheng, Wei-Chun, et al. “NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-Based FTL via NAND-SPIN.” 2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA), IEEE, 2020, doi:10.1109/nvmsa51238.2020.9188172.
Google Scholar