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45 Publications


2023 | Journal Article | LibreCat-ID: 46573
E. Baron et al., “Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function,” Journal of Applied Physics, vol. 134, no. 7, 2023, doi: 10.1063/5.0153091.
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2023 | Journal Article | LibreCat-ID: 46132
M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,” physica status solidi (b), vol. 260, no. 7, 2023, doi: 10.1002/pssb.202300034.
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2023 | Journal Article | LibreCat-ID: 46741
M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN,” ACS Applied Materials & Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi: 10.1021/acsami.3c06319.
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2022 | Journal Article | LibreCat-ID: 35232
F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,” physica status solidi (b), Art. no. 2200508, 2022, doi: 10.1002/pssb.202200508.
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2021 | Journal Article | LibreCat-ID: 23842
E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, and D. J. As, “Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system,” Journal of Physics D: Applied Physics, 2021.
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2021 | Journal Article | LibreCat-ID: 25227 | OA
M. Hajlaoui et al., “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,” Scientific Reports, vol. 11, Art. no. 19081, 2021, doi: 10.1038/s41598-021-98569-6.
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2021 | Journal Article | LibreCat-ID: 23843
F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” AIP Advances, Art. no. 075013, 2021, doi: 10.1063/5.0053865.
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2020 | Journal Article | LibreCat-ID: 23838
A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,” Journal of Electronic Materials, pp. 2008–2017, 2020.
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2020 | Journal Article | LibreCat-ID: 23840
E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” physica status solidi (b), 2020.
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2020 | Journal Article | LibreCat-ID: 23841
M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), 2020.
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2019 | Journal Article | LibreCat-ID: 23831
E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3,” Physical Review Materials, 2019.
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2019 | Journal Article | LibreCat-ID: 8646
M. Deppe et al., “Germanium doping of cubic GaN grown by molecular beam epitaxy,” Journal of Applied Physics, 2019.
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2019 | Journal Article | LibreCat-ID: 13965
J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Optical excitation density dependence of spin dynamics in bulk cubic GaN,” Journal of Applied Physics, 2019.
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2019 | Journal Article | LibreCat-ID: 13966
E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3,” Physical Review Materials, 2019.
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2019 | Journal Article | LibreCat-ID: 15444 | OA
M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), Art. no. 1900532, 2019, doi: 10.1002/pssb.201900532.
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2018 | Journal Article | LibreCat-ID: 4809
L. K. S. Herval, M. P. F. de Godoy, T. Wecker, and D. J. As, “Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures,” Journal of Luminescence, vol. 198, pp. 309–313, 2018.
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2018 | Journal Article | LibreCat-ID: 7022
S. Blumenthal, D. Reuter, and D. J. As, “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 5, 2018.
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2018 | Book Chapter | LibreCat-ID: 4350
D. J. As and K. Lischka, “Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications,” in Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.
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2018 | Journal Article | LibreCat-ID: 20588
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As, “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 3, p. 1600729, 2018, doi: https://doi.org/10.1002/pssb.201600729.
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2017 | Journal Article | LibreCat-ID: 4808
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells,” physica status solidi (b), vol. 255, no. 5, 2017.
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