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379 Publications
2022 | Journal Article | LibreCat-ID: 40523
B. Jonas et al., “Nonlinear down-conversion in a single quantum dot,” Nature Communications, vol. 13, no. 1, Art. no. 1387, 2022, doi: 10.1038/s41467-022-28993-3.
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2021 | Journal Article | LibreCat-ID: 20592 | 
T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, and D. Reuter, “Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off,” physica status solidi (a), vol. 218, no. 3, p. 2000408, 2021.
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2021 | Journal Article | LibreCat-ID: 27099
A. Widhalm et al., “Optoelectronic sampling of ultrafast electric transients with single quantum dots,” Applied Physics Letters, vol. 119, p. 181109, 2021, doi: 10.1063/5.0061358.
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2021 | Journal Article | LibreCat-ID: 46135
J. Schall et al., “Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography,” Advanced Quantum Technologies, vol. 4, no. 6, Art. no. 2100002, 2021, doi: 10.1002/qute.202100002.
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2021 | Journal Article | LibreCat-ID: 25227 |
M. Hajlaoui et al., “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,” Scientific Reports, vol. 11, Art. no. 19081, 2021, doi: 10.1038/s41598-021-98569-6.
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2021 | Journal Article | LibreCat-ID: 23843
F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” AIP Advances, Art. no. 075013, 2021, doi: 10.1063/5.0053865.
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2020 | Journal Article | LibreCat-ID: 17433
D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton, and O. Klochan, “Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential,” Applied Physics Letters, 2020.
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2020 | Journal Article | LibreCat-ID: 34093
T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. Lindner, “Strain-driven InAs island growth on top of GaAs(111) nanopillars,” Physical Review Materials, vol. 4, no. 1, Art. no. 014602, 2020, doi: 10.1103/physrevmaterials.4.014602.
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