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379 Publications
2022 | Journal Article | LibreCat-ID: 40523
Jonas, B., et al. “Nonlinear Down-Conversion in a Single Quantum Dot.” Nature Communications, vol. 13, no. 1, 1387, Springer Science and Business Media LLC, 2022, doi:10.1038/s41467-022-28993-3.
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| DOI
2022 | Research Data | LibreCat-ID: 40428
Jonas, Björn, et al. Nonlinear Down-Conversion in a Single Quantum Dot. LibreCat University, 2022, doi:10.5281/ZENODO.6024228.
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| DOI
2021 | Journal Article | LibreCat-ID: 20592 | 
Henksmeier, Tobias, et al. “Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off.” Physica Status Solidi (A), vol. 218, no. 3, 2021, p. 2000408, doi:https://doi.org/10.1002/pssa.202000408.
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2021 | Journal Article | LibreCat-ID: 22533
Meier, F., et al. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” AIP Advances, 075013, 2021, doi:10.1063/5.0053865.
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| DOI
2021 | Journal Article | LibreCat-ID: 22003
Evers, E., et al. “Suppression of Nuclear Spin Fluctuations in an InGaAs Quantum Dot Ensemble by GHz-Pulsed Optical Excitation.” Npj Quantum Information, 2021, doi:10.1038/s41534-021-00395-1.
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2021 | Journal Article | LibreCat-ID: 22004
Schall, Johannes, et al. “Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography.” Advanced Quantum Technologies, 2100002, 2021, doi:10.1002/qute.202100002.
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2021 | Journal Article | LibreCat-ID: 27099
Widhalm, Alex, et al. “Optoelectronic Sampling of Ultrafast Electric Transients with Single Quantum Dots.” Applied Physics Letters, vol. 119, 2021, p. 181109, doi:10.1063/5.0061358.
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2021 | Journal Article | LibreCat-ID: 46135
Schall, Johannes, et al. “Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography.” Advanced Quantum Technologies, vol. 4, no. 6, 2100002, Wiley, 2021, doi:10.1002/qute.202100002.
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2021 | Journal Article | LibreCat-ID: 25227 |
Hajlaoui, Mahdi, et al. “Extremely Low-Energy ARPES of Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.” Scientific Reports, vol. 11, 19081, 2021, doi:10.1038/s41598-021-98569-6.
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2021 | Journal Article | LibreCat-ID: 23843
Meier, F., et al. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” AIP Advances, 075013, 2021, doi:10.1063/5.0053865.
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2020 | Journal Article | LibreCat-ID: 17433
Wang, D. Q., et al. “Two-Dimensional Lateral Surface Superlattices in GaAs Heterostructures with Independent Control of Carrier Density and Modulation Potential.” Applied Physics Letters, 032102, 2020, doi:10.1063/5.0009462.
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2020 | Journal Article | LibreCat-ID: 17434
Kunnathully, Vinay S., et al. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.” Journal of Crystal Growth, 125597, 2020, doi:10.1016/j.jcrysgro.2020.125597.
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2020 | Journal Article | LibreCat-ID: 17435
Geier, M., et al. “Electrostatic Potential Shape of Gate-Defined Quantum Point Contacts.” Physical Review B, 2020, doi:10.1103/physrevb.101.165429.
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2020 | Journal Article | LibreCat-ID: 17436
Javaid Iqbal, Muhammad, et al. “Characterization of Low-Resistance Ohmic Contacts to a Two-Dimensional Electron Gas in a GaAs/AlGaAs Heterostructure.” The European Physical Journal Applied Physics, 20101, 2020, doi:10.1051/epjap/2020190202.
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2020 | Journal Article | LibreCat-ID: 17437
Ebler, C., et al. “Electrical Detection of Excitonic States by Time-Resolved Conductance Measurements.” Physical Review B, 2020, doi:10.1103/physrevb.101.125303.
LibreCat
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2020 | Journal Article | LibreCat-ID: 23841
Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N.” Physica Status Solidi (B), 1900532, 2020, doi:10.1002/pssb.201900532.
LibreCat
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2020 | Journal Article | LibreCat-ID: 17995
Riha, Christian, et al. “Excess Noise in Al x Ga 1 − XAs/GaAs Based Quantum Rings.” Applied Physics Letters, 063102, 2020, doi:10.1063/5.0002247.
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2020 | Journal Article | LibreCat-ID: 21796
Schuster, J., et al. “Two-Dimensional Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.” Semiconductor Science and Technology, 085011, 2020, doi:10.1088/1361-6641/ab89e1.
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| DOI
2020 | Journal Article | LibreCat-ID: 21797
Riedl, T., et al. “Strain-Driven InAs Island Growth on Top of GaAs(111) Nanopillars.” Physical Review Materials, 2020, doi:10.1103/physrevmaterials.4.014602.
LibreCat
| DOI
2020 | Journal Article | LibreCat-ID: 34093
Riedl, Thomas, et al. “Strain-Driven InAs Island Growth on Top of GaAs(111) Nanopillars.” Physical Review Materials, vol. 4, no. 1, 014602, American Physical Society (APS), 2020, doi:10.1103/physrevmaterials.4.014602.
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