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379 Publications
2021 | Journal Article | LibreCat-ID: 22004
Schall, J., Deconinck, M., Bart, N., Florian, M., Helversen, M., Dangel, C., … Reitzenstein, S. (2021). Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography. Advanced Quantum Technologies. https://doi.org/10.1002/qute.202100002
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| DOI
2021 | Journal Article | LibreCat-ID: 27099
Widhalm, A., Krehs, S., Siebert, D., Sharma, N. L., Langer, T., Jonas, B., Reuter, D., Thiede, A., Förstner, J., & Zrenner, A. (2021). Optoelectronic sampling of ultrafast electric transients with single quantum dots. Applied Physics Letters, 119, 181109. https://doi.org/10.1063/5.0061358
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2021 | Journal Article | LibreCat-ID: 46135
Schall, J., Deconinck, M., Bart, N., Florian, M., Helversen, M., Dangel, C., Schmidt, R., Bremer, L., Bopp, F., Hüllen, I., Gies, C., Reuter, D., Wieck, A. D., Rodt, S., Finley, J. J., Jahnke, F., Ludwig, A., & Reitzenstein, S. (2021). Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography. Advanced Quantum Technologies, 4(6), Article 2100002. https://doi.org/10.1002/qute.202100002
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2021 | Journal Article | LibreCat-ID: 25227 | 
Hajlaoui, M., Ponzoni, S., Deppe, M., Henksmeier, T., As, D. J., Reuter, D., Zentgraf, T., Springholz, G., Schneider, C. M., Cramm, S., & Cinchetti, M. (2021). Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports, 11, Article 19081. https://doi.org/10.1038/s41598-021-98569-6
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2021 | Journal Article | LibreCat-ID: 23843
Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., & As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances, Article 075013. https://doi.org/10.1063/5.0053865
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| DOI
2020 | Journal Article | LibreCat-ID: 17433
Wang, D. Q., Reuter, D., Wieck, A. D., Hamilton, A. R., & Klochan, O. (2020). Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential. Applied Physics Letters. https://doi.org/10.1063/5.0009462
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2020 | Journal Article | LibreCat-ID: 17434
Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., & Lindner, J. K. N. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. https://doi.org/10.1016/j.jcrysgro.2020.125597
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| DOI
2020 | Journal Article | LibreCat-ID: 17435
Geier, M., Freudenfeld, J., Silva, J. T., Umansky, V., Reuter, D., Wieck, A. D., … Ludwig, S. (2020). Electrostatic potential shape of gate-defined quantum point contacts. Physical Review B. https://doi.org/10.1103/physrevb.101.165429
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2020 | Journal Article | LibreCat-ID: 17436
Javaid Iqbal, M., Reuter, D., Wieck, A. D., & van der Wal, C. (2020). Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure. The European Physical Journal Applied Physics. https://doi.org/10.1051/epjap/2020190202
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2020 | Journal Article | LibreCat-ID: 17437
Ebler, C., Labud, P. A., Rai, A. K., Reuter, D., Wieck, A. D., & Ludwig, A. (2020). Electrical detection of excitonic states by time-resolved conductance measurements. Physical Review B. https://doi.org/10.1103/physrevb.101.125303
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2020 | Journal Article | LibreCat-ID: 23841
Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2020). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900532
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2020 | Journal Article | LibreCat-ID: 17995
Riha, C., Buchholz, S. S., Chiatti, O., Wieck, A. D., Reuter, D., & Fischer, S. F. (2020). Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings. Applied Physics Letters. https://doi.org/10.1063/5.0002247
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2020 | Journal Article | LibreCat-ID: 21796
Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2020). Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/ab89e1
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2020 | Journal Article | LibreCat-ID: 21797
Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., & Lindner, J. K. N. (2020). Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials. https://doi.org/10.1103/physrevmaterials.4.014602
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2020 | Journal Article | LibreCat-ID: 34093
Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., & Lindner, J. (2020). Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials, 4(1), Article 014602. https://doi.org/10.1103/physrevmaterials.4.014602
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2020 | Journal Article | LibreCat-ID: 34091
Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., & Lindner, J. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth, 537, Article 125597. https://doi.org/10.1016/j.jcrysgro.2020.125597
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| DOI
2020 | Journal Article | LibreCat-ID: 17322
Mukherjee, A., Widhalm, A., Siebert, D., Krehs, S., Sharma, N., Thiede, A., Reuter, D., Förstner, J., & Zrenner, A. (2020). Electrically controlled rapid adiabatic passage in a single quantum dot. Applied Physics Letters, 116, 251103. https://doi.org/10.1063/5.0012257
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2020 | Conference Abstract | LibreCat-ID: 39966
Förstner, J., Widhalm, A., Mukherjee, A., Krehs, S., Jonas, B., Spychala, K., Förstner, J., Thiede, A., Reuter, D., & Zrenner, A. (2020). Ultrafast electric control of a single QD exciton. 11th International Conference on Quantum Dots.
LibreCat
2019 | Journal Article | LibreCat-ID: 7800
Henksmeier, T., Shvarkov, S., Trapp, A., & Reuter, D. (2019). Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B. Journal of Crystal Growth, 512, 164–168. https://doi.org/10.1016/j.jcrysgro.2019.02.006
LibreCat
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2019 | Journal Article | LibreCat-ID: 8646
Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter, D., & As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. https://doi.org/10.1063/1.5066095
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