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383 Publications
2022 | Research Data | LibreCat-ID: 40428
Jonas B, Heinze DF, Schöll E, et al. Nonlinear Down-Conversion in a Single Quantum Dot. LibreCat University; 2022. doi:10.5281/ZENODO.6024228
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2021 | Journal Article | LibreCat-ID: 20592 | 
Henksmeier T, Eppinger M, Reineke B, Zentgraf T, Meier C, Reuter D. Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off. physica status solidi (a). 2021;218(3):2000408. doi:https://doi.org/10.1002/pssa.202000408
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2021 | Journal Article | LibreCat-ID: 22533
Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances. 2021. doi:10.1063/5.0053865
LibreCat
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2021 | Journal Article | LibreCat-ID: 22003
Evers E, Kopteva NE, Yugova IA, et al. Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation. npj Quantum Information. 2021. doi:10.1038/s41534-021-00395-1
LibreCat
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2021 | Journal Article | LibreCat-ID: 22004
Schall J, Deconinck M, Bart N, et al. Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography. Advanced Quantum Technologies. 2021. doi:10.1002/qute.202100002
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2021 | Journal Article | LibreCat-ID: 25227 |
Hajlaoui M, Ponzoni S, Deppe M, et al. Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports. 2021;11. doi:10.1038/s41598-021-98569-6
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2021 | Journal Article | LibreCat-ID: 23843
Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances. Published online 2021. doi:10.1063/5.0053865
LibreCat
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2021 | Journal Article | LibreCat-ID: 27099
Widhalm A, Krehs S, Siebert D, et al. Optoelectronic sampling of ultrafast electric transients with single quantum dots. Applied Physics Letters. 2021;119:181109. doi:10.1063/5.0061358
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2021 | Journal Article | LibreCat-ID: 46135
Schall J, Deconinck M, Bart N, et al. Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography. Advanced Quantum Technologies. 2021;4(6). doi:10.1002/qute.202100002
LibreCat
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2020 | Journal Article | LibreCat-ID: 17433
Wang DQ, Reuter D, Wieck AD, Hamilton AR, Klochan O. Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential. Applied Physics Letters. 2020. doi:10.1063/5.0009462
LibreCat
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2020 | Journal Article | LibreCat-ID: 17434
Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner JKN. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020. doi:10.1016/j.jcrysgro.2020.125597
LibreCat
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2020 | Journal Article | LibreCat-ID: 17435
Geier M, Freudenfeld J, Silva JT, et al. Electrostatic potential shape of gate-defined quantum point contacts. Physical Review B. 2020. doi:10.1103/physrevb.101.165429
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2020 | Journal Article | LibreCat-ID: 17436
Javaid Iqbal M, Reuter D, Wieck AD, van der Wal C. Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure. The European Physical Journal Applied Physics. 2020. doi:10.1051/epjap/2020190202
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2020 | Journal Article | LibreCat-ID: 17437
Ebler C, Labud PA, Rai AK, Reuter D, Wieck AD, Ludwig A. Electrical detection of excitonic states by time-resolved conductance measurements. Physical Review B. 2020. doi:10.1103/physrevb.101.125303
LibreCat
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2020 | Journal Article | LibreCat-ID: 23841
Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. physica status solidi (b). 2020. doi:10.1002/pssb.201900532
LibreCat
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2020 | Journal Article | LibreCat-ID: 17995
Riha C, Buchholz SS, Chiatti O, Wieck AD, Reuter D, Fischer SF. Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings. Applied Physics Letters. 2020. doi:10.1063/5.0002247
LibreCat
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2020 | Journal Article | LibreCat-ID: 21796
Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. 2020. doi:10.1088/1361-6641/ab89e1
LibreCat
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2020 | Journal Article | LibreCat-ID: 21797
Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner JKN. Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials. 2020. doi:10.1103/physrevmaterials.4.014602
LibreCat
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2020 | Journal Article | LibreCat-ID: 34093
Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner J. Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials. 2020;4(1). doi:10.1103/physrevmaterials.4.014602
LibreCat
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2020 | Journal Article | LibreCat-ID: 34091
Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner J. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020;537. doi:10.1016/j.jcrysgro.2020.125597
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