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383 Publications


2020 | Journal Article | LibreCat-ID: 17434
V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. K. N. Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” Journal of Crystal Growth, 2020.
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2020 | Journal Article | LibreCat-ID: 17435
M. Geier et al., “Electrostatic potential shape of gate-defined quantum point contacts,” Physical Review B, 2020.
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2020 | Journal Article | LibreCat-ID: 17436
M. Javaid Iqbal, D. Reuter, A. D. Wieck, and C. van der Wal, “Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure,” The European Physical Journal Applied Physics, 2020.
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2020 | Journal Article | LibreCat-ID: 17437
C. Ebler, P. A. Labud, A. K. Rai, D. Reuter, A. D. Wieck, and A. Ludwig, “Electrical detection of excitonic states by time-resolved conductance measurements,” Physical Review B, 2020.
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2020 | Journal Article | LibreCat-ID: 23841
M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), 2020.
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2020 | Journal Article | LibreCat-ID: 17995
C. Riha, S. S. Buchholz, O. Chiatti, A. D. Wieck, D. Reuter, and S. F. Fischer, “Excess noise in      Al x  Ga  1 − xAs/GaAs based quantum rings,” Applied Physics Letters, 2020.
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2020 | Journal Article | LibreCat-ID: 21796
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,” Semiconductor Science and Technology, 2020.
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2020 | Journal Article | LibreCat-ID: 21797
T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. K. N. Lindner, “Strain-driven InAs island growth on top of GaAs(111) nanopillars,” Physical Review Materials, 2020.
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2020 | Journal Article | LibreCat-ID: 34093
T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. Lindner, “Strain-driven InAs island growth on top of GaAs(111) nanopillars,” Physical Review Materials, vol. 4, no. 1, Art. no. 014602, 2020, doi: 10.1103/physrevmaterials.4.014602.
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2020 | Journal Article | LibreCat-ID: 34091
V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” Journal of Crystal Growth, vol. 537, Art. no. 125597, 2020, doi: 10.1016/j.jcrysgro.2020.125597.
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2020 | Journal Article | LibreCat-ID: 17322
A. Mukherjee et al., “Electrically controlled rapid adiabatic passage in a single quantum dot,” Applied Physics Letters, vol. 116, p. 251103, 2020, doi: 10.1063/5.0012257.
LibreCat | Files available | DOI
 

2020 | Conference Abstract | LibreCat-ID: 39966
J. Förstner et al., “Ultrafast electric control of a single QD exciton,” 2020.
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2019 | Journal Article | LibreCat-ID: 7800
T. Henksmeier, S. Shvarkov, A. Trapp, and D. Reuter, “Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B,” Journal of Crystal Growth, vol. 512, pp. 164–168, 2019.
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2019 | Journal Article | LibreCat-ID: 8646
M. Deppe et al., “Germanium doping of cubic GaN grown by molecular beam epitaxy,” Journal of Applied Physics, 2019.
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2019 | Journal Article | LibreCat-ID: 15444 | OA
M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), Art. no. 1900532, 2019, doi: 10.1002/pssb.201900532.
LibreCat | DOI | Download (ext.)
 

2018 | Conference Paper | LibreCat-ID: 4413
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars,” presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan), 2018.
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2018 | Conference Paper | LibreCat-ID: 4414
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A ,” presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan), 2018.
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2018 | Journal Article | LibreCat-ID: 7008
E. Evers et al., “Decay and revival of electron spin polarization in an ensemble of (In,Ga)As quantum dots,” Physical Review B, vol. 98, no. 7, 2018.
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2018 | Journal Article | LibreCat-ID: 7009
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures,” Semiconductor Science and Technology, vol. 33, no. 9, 2018.
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2018 | Journal Article | LibreCat-ID: 7010
J. Debus et al., “Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures,” Physics of the Solid State, vol. 60, no. 8, pp. 1611–1617, 2018.
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