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45 Publications
2023 | Journal Article | LibreCat-ID: 46573
Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function
E. Baron, R. Goldhahn, S. Espinoza, M. Zahradník, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg, Journal of Applied Physics 134 (2023).
LibreCat
| DOI
E. Baron, R. Goldhahn, S. Espinoza, M. Zahradník, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg, Journal of Applied Physics 134 (2023).
2023 | Journal Article | LibreCat-ID: 46132
Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy
M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).
LibreCat
| DOI
M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).
2023 | Journal Article | LibreCat-ID: 46741
Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN
M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann, ACS Applied Materials & Interfaces 15 (2023) 39513–39522.
LibreCat
| DOI
M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann, ACS Applied Materials & Interfaces 15 (2023) 39513–39522.
2022 | Journal Article | LibreCat-ID: 35232
Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks
F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022).
LibreCat
| DOI
F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022).
2021 | Journal Article | LibreCat-ID: 23842
Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system
E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, D.J. As, Journal of Physics D: Applied Physics (2021).
LibreCat
| DOI
E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, D.J. As, Journal of Physics D: Applied Physics (2021).
2021 | Journal Article | LibreCat-ID: 25227 | 
Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).
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| DOI
| Download (ext.)
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).
2021 | Journal Article | LibreCat-ID: 23843
Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
LibreCat
| DOI
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
2020 | Journal Article | LibreCat-ID: 23838
A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs
A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017.
LibreCat
| DOI
A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017.
2020 | Journal Article | LibreCat-ID: 23840
Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi (B) (2020).
LibreCat
| DOI
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi (B) (2020).
2020 | Journal Article | LibreCat-ID: 23841
Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).
LibreCat
| DOI
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).
2019 | Journal Article | LibreCat-ID: 23831
Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).
LibreCat
| DOI
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).
2019 | Journal Article | LibreCat-ID: 8646
Germanium doping of cubic GaN grown by molecular beam epitaxy
M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).
LibreCat
| DOI
M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).
2019 | Journal Article | LibreCat-ID: 13965
Optical excitation density dependence of spin dynamics in bulk cubic GaN
J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics (2019).
LibreCat
| DOI
J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics (2019).
2019 | Journal Article | LibreCat-ID: 13966
Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).
LibreCat
| DOI
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).
2019 | Journal Article | LibreCat-ID: 15444 |
Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).
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| DOI
| Download (ext.)
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).
2018 | Journal Article | LibreCat-ID: 4809
Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures
L.K.S. Herval, M.P.F. de Godoy, T. Wecker, D.J. As, Journal of Luminescence 198 (2018) 309–313.
LibreCat
| DOI
L.K.S. Herval, M.P.F. de Godoy, T. Wecker, D.J. As, Journal of Luminescence 198 (2018) 309–313.
2018 | Journal Article | LibreCat-ID: 7022
Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).
LibreCat
| DOI
S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).
2018 | Book Chapter | LibreCat-ID: 4350
Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications
D.J. As, K. Lischka, in: Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.
LibreCat
| DOI
D.J. As, K. Lischka, in: Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.
2018 | Journal Article | LibreCat-ID: 20588
Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.
LibreCat
| DOI
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.
2017 | Journal Article | LibreCat-ID: 4808
Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).
LibreCat
| DOI
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).