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45 Publications
2023 | Journal Article | LibreCat-ID: 46132
Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. physica status solidi (b). 2023;260(7). doi:10.1002/pssb.202300034
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2023 | Journal Article | LibreCat-ID: 46741
Zscherp MF, Jentsch SA, Müller MJ, et al. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials & Interfaces. 2023;15(33):39513-39522. doi:10.1021/acsami.3c06319
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2023 | Journal Article | LibreCat-ID: 46573
Baron E, Goldhahn R, Espinoza S, et al. Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal of Applied Physics. 2023;134(7). doi:10.1063/5.0153091
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2022 | Journal Article | LibreCat-ID: 35232
Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b). Published online 2022. doi:10.1002/pssb.202200508
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2021 | Journal Article | LibreCat-ID: 23842
Baron E, Feneberg M, Goldhahn R, Deppe M, Tacken F, As DJ. Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system. Journal of Physics D: Applied Physics. 2021. doi:10.1088/1361-6463/abb97a
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2021 | Journal Article | LibreCat-ID: 25227 | 
Hajlaoui M, Ponzoni S, Deppe M, et al. Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports. 2021;11. doi:10.1038/s41598-021-98569-6
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2021 | Journal Article | LibreCat-ID: 23843
Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances. Published online 2021. doi:10.1063/5.0053865
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2020 | Journal Article | LibreCat-ID: 23838
Beloufa A, Bouguenna D, Kermas N, As DJ. A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. Journal of Electronic Materials. 2020:2008-2017. doi:10.1007/s11664-019-07927-8
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2020 | Journal Article | LibreCat-ID: 23840
Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. physica status solidi (b). 2020. doi:10.1002/pssb.201900522
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2020 | Journal Article | LibreCat-ID: 23841
Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. physica status solidi (b). 2020. doi:10.1002/pssb.201900532
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2019 | Journal Article | LibreCat-ID: 23831
Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. Physical Review Materials. 2019. doi:10.1103/physrevmaterials.3.104603
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2019 | Journal Article | LibreCat-ID: 8646
Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. 2019. doi:10.1063/1.5066095
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2019 | Journal Article | LibreCat-ID: 13965
Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics. 2019. doi:10.1063/1.5123914
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2019 | Journal Article | LibreCat-ID: 13966
Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. Physical Review Materials. 2019. doi:10.1103/physrevmaterials.3.104603
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2019 | Journal Article | LibreCat-ID: 15444 |
Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. physica status solidi (b). Published online 2019. doi:10.1002/pssb.201900532
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2018 | Journal Article | LibreCat-ID: 4809
Herval LKS, de Godoy MPF, Wecker T, As DJ. Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. Journal of Luminescence. 2018;198:309-313. doi:10.1016/j.jlumin.2018.02.051
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2018 | Journal Article | LibreCat-ID: 7022
Blumenthal S, Reuter D, As DJ. Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(5). doi:10.1002/pssb.201700457
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2018 | Book Chapter | LibreCat-ID: 4350
As DJ, Lischka K. Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications. In: Molecular Beam Epitaxy. Elsevier; 2018:95-114. doi:10.1016/b978-0-12-812136-8.00006-2
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2018 | Journal Article | LibreCat-ID: 20588
Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(3):1600729. doi:https://doi.org/10.1002/pssb.201600729
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2017 | Journal Article | LibreCat-ID: 4808
Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. physica status solidi (b). 2017;255(5). doi:10.1002/pssb.201700373
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