Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)

R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As, J. Lindner, Physica Status Solidi (C) 11 (2014) 265–268.

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Abstract
We report for the first time on the growth of cubic AlN/GaN multi‐quantum wells (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure consists of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between, which were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy. Substrate patterning has been realized by electron beam lithography and a reactive ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height of about 700 nm. (Scanning) transmission electron microscopy studies show that the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating the local growth rate. Further, the growth at the edges of the surface pattern is investigated. The MQW layers cover the 90° edges by developing low‐index facets rather than by forming a conformal system of 90° angled layers.
Publishing Year
Journal Title
physica status solidi (c)
Volume
11
Issue
2
Page
265-268
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Kemper RM, Mietze C, Hiller L, et al. Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). physica status solidi (c). 2014;11(2):265-268. doi:10.1002/pssc.201300292
Kemper, R. M., Mietze, C., Hiller, L., Stauden, T., Pezoldt, J., Meertens, D., … Lindner, J. (2014). Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). Physica Status Solidi (C), 11(2), 265–268. https://doi.org/10.1002/pssc.201300292
@article{Kemper_Mietze_Hiller_Stauden_Pezoldt_Meertens_Luysberg_As_Lindner_2014, title={Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)}, volume={11}, DOI={10.1002/pssc.201300292}, number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper, R. M. and Mietze, C. and Hiller, L. and Stauden, T. and Pezoldt, J. and Meertens, D. and Luysberg, M. and As, D. J. and Lindner, Jörg}, year={2014}, pages={265–268} }
Kemper, R. M., C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D. J. As, and Jörg Lindner. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned 3C-SiC/Si (001).” Physica Status Solidi (C) 11, no. 2 (2014): 265–68. https://doi.org/10.1002/pssc.201300292.
R. M. Kemper et al., “Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001),” physica status solidi (c), vol. 11, no. 2, pp. 265–268, 2014.
Kemper, R. M., et al. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned 3C-SiC/Si (001).” Physica Status Solidi (C), vol. 11, no. 2, Wiley, 2014, pp. 265–68, doi:10.1002/pssc.201300292.
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