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45 Publications
2021 | Journal Article | LibreCat-ID: 25227 | 
Hajlaoui, M., Ponzoni, S., Deppe, M., Henksmeier, T., As, D. J., Reuter, D., Zentgraf, T., Springholz, G., Schneider, C. M., Cramm, S., & Cinchetti, M. (2021). Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports, 11, Article 19081. https://doi.org/10.1038/s41598-021-98569-6
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2021 | Journal Article | LibreCat-ID: 23843
Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., & As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances, Article 075013. https://doi.org/10.1063/5.0053865
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2020 | Journal Article | LibreCat-ID: 23838
Beloufa, A., Bouguenna, D., Kermas, N., & As, D. J. (2020). A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. Journal of Electronic Materials, 2008–2017. https://doi.org/10.1007/s11664-019-07927-8
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2020 | Journal Article | LibreCat-ID: 23840
Baron, E., Goldhahn, R., Deppe, M., As, D. J., & Feneberg, M. (2020). Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900522
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2020 | Journal Article | LibreCat-ID: 23841
Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2020). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900532
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