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45 Publications


2021 | Journal Article | LibreCat-ID: 25227 | OA
Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).
LibreCat | DOI | Download (ext.)
 

2021 | Journal Article | LibreCat-ID: 23843
Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 23838
A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs
A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017.
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 23840
Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi (B) (2020).
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 23841
Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).
LibreCat | DOI
 

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