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45 Publications
2021 | Journal Article | LibreCat-ID: 25227 | 
Hajlaoui, Mahdi, et al. “Extremely Low-Energy ARPES of Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.” Scientific Reports, vol. 11, 19081, 2021, doi:10.1038/s41598-021-98569-6.
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2021 | Journal Article | LibreCat-ID: 23843
Meier, F., et al. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” AIP Advances, 075013, 2021, doi:10.1063/5.0053865.
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2020 | Journal Article | LibreCat-ID: 23838
Beloufa, Abbes, et al. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” Journal of Electronic Materials, 2020, pp. 2008–17, doi:10.1007/s11664-019-07927-8.
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2020 | Journal Article | LibreCat-ID: 23840
Baron, Elias, et al. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende GaN.” Physica Status Solidi (B), 1900522, 2020, doi:10.1002/pssb.201900522.
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2020 | Journal Article | LibreCat-ID: 23841
Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N.” Physica Status Solidi (B), 1900532, 2020, doi:10.1002/pssb.201900532.
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