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45 Publications
2021 | Journal Article | LibreCat-ID: 25227 | 
Hajlaoui, Mahdi, Stefano Ponzoni, Michael Deppe, Tobias Henksmeier, Donat Josef As, Dirk Reuter, Thomas Zentgraf, et al. “Extremely Low-Energy ARPES of Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.” Scientific Reports 11 (2021). https://doi.org/10.1038/s41598-021-98569-6.
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2021 | Journal Article | LibreCat-ID: 23843
Meier, F., M. Protte, E. Baron, M. Feneberg, R. Goldhahn, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” AIP Advances, 2021. https://doi.org/10.1063/5.0053865.
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2020 | Journal Article | LibreCat-ID: 23838
Beloufa, Abbes, Driss Bouguenna, Nawel Kermas, and Donat Josef As. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs.” Journal of Electronic Materials, 2020, 2008–17. https://doi.org/10.1007/s11664-019-07927-8.
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2020 | Journal Article | LibreCat-ID: 23840
Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende GaN.” Physica Status Solidi (B), 2020. https://doi.org/10.1002/pssb.201900522.
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2020 | Journal Article | LibreCat-ID: 23841
Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and Donat Josef As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N.” Physica Status Solidi (B), 2020. https://doi.org/10.1002/pssb.201900532.
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