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45 Publications


2021 | Journal Article | LibreCat-ID: 25227 | OA
M. Hajlaoui et al., “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,” Scientific Reports, vol. 11, Art. no. 19081, 2021, doi: 10.1038/s41598-021-98569-6.
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2021 | Journal Article | LibreCat-ID: 23843
F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” AIP Advances, Art. no. 075013, 2021, doi: 10.1063/5.0053865.
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2020 | Journal Article | LibreCat-ID: 23838
A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,” Journal of Electronic Materials, pp. 2008–2017, 2020.
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2020 | Journal Article | LibreCat-ID: 23840
E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” physica status solidi (b), 2020.
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2020 | Journal Article | LibreCat-ID: 23841
M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), 2020.
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