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45 Publications
2023 | Journal Article | LibreCat-ID: 46132
Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. physica status solidi (b). 2023;260(7). doi:10.1002/pssb.202300034
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2023 | Journal Article | LibreCat-ID: 46741
Zscherp MF, Jentsch SA, Müller MJ, et al. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials & Interfaces. 2023;15(33):39513-39522. doi:10.1021/acsami.3c06319
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2023 | Journal Article | LibreCat-ID: 46573
Baron E, Goldhahn R, Espinoza S, et al. Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal of Applied Physics. 2023;134(7). doi:10.1063/5.0153091
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2022 | Journal Article | LibreCat-ID: 35232
Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b). Published online 2022. doi:10.1002/pssb.202200508
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2021 | Journal Article | LibreCat-ID: 23842
Baron E, Feneberg M, Goldhahn R, Deppe M, Tacken F, As DJ. Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system. Journal of Physics D: Applied Physics. 2021. doi:10.1088/1361-6463/abb97a
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2021 | Journal Article | LibreCat-ID: 25227 | 
Hajlaoui M, Ponzoni S, Deppe M, et al. Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports. 2021;11. doi:10.1038/s41598-021-98569-6
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2021 | Journal Article | LibreCat-ID: 23843
Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances. Published online 2021. doi:10.1063/5.0053865
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2020 | Journal Article | LibreCat-ID: 23838
Beloufa A, Bouguenna D, Kermas N, As DJ. A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs. Journal of Electronic Materials. 2020:2008-2017. doi:10.1007/s11664-019-07927-8
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2020 | Journal Article | LibreCat-ID: 23840
Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. physica status solidi (b). 2020. doi:10.1002/pssb.201900522
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2020 | Journal Article | LibreCat-ID: 23841
Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. physica status solidi (b). 2020. doi:10.1002/pssb.201900532
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2019 | Journal Article | LibreCat-ID: 23831
Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. Physical Review Materials. 2019. doi:10.1103/physrevmaterials.3.104603
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2019 | Journal Article | LibreCat-ID: 8646
Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. 2019. doi:10.1063/1.5066095
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2019 | Journal Article | LibreCat-ID: 13965
Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics. 2019. doi:10.1063/1.5123914
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2019 | Journal Article | LibreCat-ID: 13966
Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3. Physical Review Materials. 2019. doi:10.1103/physrevmaterials.3.104603
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2019 | Journal Article | LibreCat-ID: 15444 |
Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. physica status solidi (b). Published online 2019. doi:10.1002/pssb.201900532
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2018 | Journal Article | LibreCat-ID: 4809
Herval LKS, de Godoy MPF, Wecker T, As DJ. Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. Journal of Luminescence. 2018;198:309-313. doi:10.1016/j.jlumin.2018.02.051
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2018 | Journal Article | LibreCat-ID: 7022
Blumenthal S, Reuter D, As DJ. Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(5). doi:10.1002/pssb.201700457
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2018 | Book Chapter | LibreCat-ID: 4350
As DJ, Lischka K. Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications. In: Molecular Beam Epitaxy. Elsevier; 2018:95-114. doi:10.1016/b978-0-12-812136-8.00006-2
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2018 | Journal Article | LibreCat-ID: 20588
Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(3):1600729. doi:https://doi.org/10.1002/pssb.201600729
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2017 | Journal Article | LibreCat-ID: 4808
Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. physica status solidi (b). 2017;255(5). doi:10.1002/pssb.201700373
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2017 | Journal Article | LibreCat-ID: 4810
Wecker T, Jostmeier T, Rieger T, et al. Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures. Journal of Crystal Growth. 2017;477:149-153. doi:10.1016/j.jcrysgro.2017.01.022
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2017 | Journal Article | LibreCat-ID: 4811
Deppe M, Gerlach JW, Reuter D, As DJ. Incorporation of germanium for n-type doping of cubic GaN. physica status solidi (b). 2017;254(8). doi:10.1002/pssb.201600700
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2017 | Journal Article | LibreCat-ID: 4812
Czerniuk T, Ehrlich T, Wecker T, et al. Picosecond Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N. Physical Review Applied. 2017;7(1). doi:10.1103/physrevapplied.7.014006
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2017 | Journal Article | LibreCat-ID: 4813
As DJ, Deppe M, Gerlach J, Reuter D. Optical Properties of Germanium Doped Cubic GaN. MRS Advances. 2017;2(05):283-288. doi:10.1557/adv.2016.637
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2016 | Journal Article | LibreCat-ID: 4814
Buß JH, Schupp T, As DJ, Brandt O, Hägele D, Rudolph J. Electron spin dynamics in cubic GaN. Physical Review B. 2016;94(23). doi:10.1103/physrevb.94.235202
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2016 | Journal Article | LibreCat-ID: 4815
Righetti VAN, Gratens X, Chitta VA, et al. Magnetic and structural properties of Fe-implanted cubic GaN. Journal of Applied Physics. 2016;120(10). doi:10.1063/1.4962275
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2016 | Journal Article | LibreCat-ID: 4817
Rothfuchs C, Kukharchyk N, Koppe T, et al. Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2016;383:1-5. doi:10.1016/j.nimb.2016.06.004
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2016 | Journal Article | LibreCat-ID: 7055
Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy. Japanese Journal of Applied Physics. 2016;55(5S). doi:10.7567/jjap.55.05fg01
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2016 | Journal Article | LibreCat-ID: 3888
Blumenthal S, Bürger M, Hildebrandt A, et al. Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. physica status solidi (c). 2016;13(5-6):292-296. doi:10.1002/pssc.201600010
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2016 | Journal Article | LibreCat-ID: 4240
Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. physica status solidi (b). 2016;253(4):778-782. doi:10.1002/pssb.201552592
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2015 | Journal Article | LibreCat-ID: 4819
Sergent S, Kako S, Bürger M, et al. Active zinc-blende III–nitride photonic structures on silicon. Applied Physics Express. 2015;9(1). doi:10.7567/apex.9.012002
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2015 | Journal Article | LibreCat-ID: 4820
Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Temperature dependence of the electron Landé g-factor in cubic GaN. Journal of Applied Physics. 2015;118(22). doi:10.1063/1.4937128
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2015 | Journal Article | LibreCat-ID: 4825
Schaefer A, Buß JH, Schupp T, et al. Strain dependent electron spin dynamics in bulk cubic GaN. Journal of Applied Physics. 2015;117(9). doi:10.1063/1.4914069
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2015 | Journal Article | LibreCat-ID: 7217
Jostmeier T, Wecker T, Reuter D, As DJ, Betz M. Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice. Applied Physics Letters. 2015;107(21). doi:10.1063/1.4936330
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2014 | Journal Article | LibreCat-ID: 4824
Wecker T, Hörich F, Feneberg M, Goldhahn R, Reuter D, As DJ. Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells. physica status solidi (b). 2014;252(5):873-878. doi:10.1002/pssb.201451531
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2014 | Journal Article | LibreCat-ID: 8762
Sergent S, Kako S, Bürger M, Schupp T, As DJ, Arakawa Y. Polarization properties of single zinc-blende GaN/AlN quantum dots. Physical Review B. 2014. doi:10.1103/physrevb.90.235312
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2014 | Journal Article | LibreCat-ID: 4064
Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures. Materials Science Forum. 2014;778-780:730-733. doi:10.4028/www.scientific.net/msf.778-780.730
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2013 | Journal Article | LibreCat-ID: 3963 |
Bürger M, Ruth M, Declair S, Förstner J, Meier C, As DJ. Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. Applied Physics Letters. 2013;102(8):081105. doi:10.1063/1.4793653
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2013 | Journal Article | LibreCat-ID: 13524
Landmann M, Rauls E, Schmidt WG, et al. Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN. Physical Review B. 2013;87(19). doi:10.1103/physrevb.87.195210
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2012 | Journal Article | LibreCat-ID: 4333
Feneberg M, Röppischer M, Cobet C, et al. Optical properties of cubic GaN from 1 to 20 eV. Physical Review B. 2012;85(15). doi:10.1103/physrevb.85.155207
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2012 | Journal Article | LibreCat-ID: 4116
Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures. Materials Science Forum. 2012;717-720:901-904. doi:10.4028/www.scientific.net/msf.717-720.901
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2011 | Journal Article | LibreCat-ID: 13568
Mietze C, Landmann M, Rauls E, et al. Band offsets in cubic GaN/AlN superlattices. Physical Review B. 2011;83(19). doi:10.1103/physrevb.83.195301
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2011 | Journal Article | LibreCat-ID: 4146
Maria Kemper R, Schupp T, Häberlen M, et al. Anti-phase domains in cubic GaN. Journal of Applied Physics. 2011;110(12). doi:10.1063/1.3666050
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2010 | Journal Article | LibreCat-ID: 13835
Scholle A, Greulich-Weber S, As DJ, et al. Magnetic characterization of conductance electrons in GaN. physica status solidi (b). 2010;247(7):1728-1731. doi:10.1002/pssb.200983582
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2009 | Conference Paper | LibreCat-ID: 4218
As DJ, Tschumak E, Laubenstein I, Kemper RM, Lischka K. Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers. In: Materials Research Society Symposium Proceedings. Vol 1108. Materials Research Society; 2009:3-8. doi:10.1557/proc-1108-a01-02
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