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19 Publications
2022 | Journal Article | LibreCat-ID: 32108
T. Henksmeier et al., “Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates,” Journal of Crystal Growth, vol. 593, Art. no. 126756, 2022, doi: 10.1016/j.jcrysgro.2022.126756.
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| DOI
2022 | Journal Article | LibreCat-ID: 31241
A. K. Verma, F. Bopp, J. J. Finley, B. Jonas, A. Zrenner, and D. Reuter, “Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy,” Journal of Crystal Growth, Art. no. 126715, 2022, doi: 10.1016/j.jcrysgro.2022.126715.
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| DOI
2020 | Journal Article | LibreCat-ID: 34091
V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” Journal of Crystal Growth, vol. 537, Art. no. 125597, 2020, doi: 10.1016/j.jcrysgro.2020.125597.
LibreCat
| DOI
2013 | Journal Article | LibreCat-ID: 3959
M. Bürger et al., “Cubic GaN quantum dots embedded in zinc-blende AlN microdisks,” Journal of Crystal Growth, vol. 378, pp. 287–290, 2013.
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2012 | Journal Article | LibreCat-ID: 4104
R. M. Kemper et al., “Growth of cubic GaN on 3C–SiC/Si (001) nanostructures,” Journal of Crystal Growth, vol. 378, pp. 291–294, 2012.
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2010 | Journal Article | LibreCat-ID: 4144
R. M. Kemper et al., “Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates,” Journal of Crystal Growth, vol. 323, no. 1, pp. 84–87, 2010.
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2010 | Journal Article | LibreCat-ID: 4214
R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543, 2010.
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2009 | Journal Article | LibreCat-ID: 4192
M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,” Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009.
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