Please note that LibreCat no longer supports Internet Explorer versions 8 or 9 (or earlier).

We recommend upgrading to the latest Internet Explorer, Google Chrome, or Firefox.

19 Publications


2022 | Journal Article | LibreCat-ID: 32108
T. Henksmeier et al., “Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates,” Journal of Crystal Growth, vol. 593, Art. no. 126756, 2022, doi: 10.1016/j.jcrysgro.2022.126756.
LibreCat | DOI
 

2022 | Journal Article | LibreCat-ID: 31241
A. K. Verma, F. Bopp, J. J. Finley, B. Jonas, A. Zrenner, and D. Reuter, “Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy,” Journal of Crystal Growth, Art. no. 126715, 2022, doi: 10.1016/j.jcrysgro.2022.126715.
LibreCat | DOI
 

2021 | Journal Article | LibreCat-ID: 20900
M. Albert, C. Golla, and C. Meier, “Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy,” Journal of Crystal Growth, vol. 557, 2021.
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 17434
V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. K. N. Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” Journal of Crystal Growth, 2020.
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 34091
V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” Journal of Crystal Growth, vol. 537, Art. no. 125597, 2020, doi: 10.1016/j.jcrysgro.2020.125597.
LibreCat | DOI
 

2019 | Journal Article | LibreCat-ID: 7800
T. Henksmeier, S. Shvarkov, A. Trapp, and D. Reuter, “Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B,” Journal of Crystal Growth, vol. 512, pp. 164–168, 2019.
LibreCat | DOI
 

2017 | Journal Article | LibreCat-ID: 4810
T. Wecker et al., “Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures,” Journal of Crystal Growth, vol. 477, pp. 149–153, 2017.
LibreCat | DOI
 

2017 | Journal Article | LibreCat-ID: 7020
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, and A. D. Wieck, “Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy,” Journal of Crystal Growth, vol. 481, pp. 7–10, 2017.
LibreCat | DOI
 

2017 | Journal Article | LibreCat-ID: 7027
S. Scholz et al., “Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy,” Journal of Crystal Growth, vol. 470, pp. 46–50, 2017.
LibreCat | DOI
 

2016 | Journal Article | LibreCat-ID: 7024
N. Sharma and D. Reuter, “A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy,” Journal of Crystal Growth, vol. 477, pp. 225–229, 2016.
LibreCat | DOI
 

2013 | Journal Article | LibreCat-ID: 3959
M. Bürger et al., “Cubic GaN quantum dots embedded in zinc-blende AlN microdisks,” Journal of Crystal Growth, vol. 378, pp. 287–290, 2013.
LibreCat | Files available | DOI
 

2012 | Journal Article | LibreCat-ID: 4104
R. M. Kemper et al., “Growth of cubic GaN on 3C–SiC/Si (001) nanostructures,” Journal of Crystal Growth, vol. 378, pp. 291–294, 2012.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 7705
K. Trunov et al., “(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires,” Journal of Crystal Growth, vol. 323, no. 1, pp. 48–51, 2010.
LibreCat | DOI
 

2010 | Journal Article | LibreCat-ID: 4144
R. M. Kemper et al., “Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates,” Journal of Crystal Growth, vol. 323, no. 1, pp. 84–87, 2010.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4214
R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543, 2010.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 13830
E. Rauls, J. Wiebe, and W. G. Schmidt, “Understanding the cubic AlN growth plane from first principles,” Journal of Crystal Growth, vol. 312, pp. 2892–2895, 2010.
LibreCat | DOI
 

2009 | Journal Article | LibreCat-ID: 4192
M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,” Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009.
LibreCat | Files available | DOI
 

2006 | Journal Article | LibreCat-ID: 7646
I. Regolin et al., “Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs,” Journal of Crystal Growth, vol. 298, pp. 607–611, 2006.
LibreCat | DOI
 

2006 | Journal Article | LibreCat-ID: 8664
J. L. Yang, D. Reuter, and A. D. Wieck, “Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100),” Journal of Crystal Growth, pp. 278–284, 2006.
LibreCat | DOI
 

Filters and Search Terms

issn=0022-0248

Search

Filter Publications

Display / Sort

Citation Style: IEEE

Export / Embed