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199 Publications


2005 | Conference Paper | LibreCat-ID: 39834
Scholz R, Müller A-D, Müller F, et al. Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In: Bao Z, Gundlach DJ, eds. SPIE Proceedings. SPIE; 2005. doi:10.1117/12.617004
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2004 | Book Chapter | LibreCat-ID: 39850
Hilleringmann U. Ätztechnik. In: Silizium-Halbleitertechnologie. Vieweg+Teubner Verlag; 2004:65–90. doi:10.1007/978-3-322-94072-8_5
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2004 | Conference Paper | LibreCat-ID: 39872
Hilleringmann U, Pannemann C. Imprint structured organic thin film transistors as driving circuit in single-use sensor applications. In: Zhang G, Zhao H, Wang Z, eds. Fifth International Symposium on Instrumentation and Control Technology. SPIE; 2004. doi:10.1117/12.521463
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2004 | Conference Paper | LibreCat-ID: 39873
Otterbach R, Hilleringmann U. Piezoresistive pressure sensors in CVD diamond for high-temperature applications. In: Zhang G, Zhao H, Wang Z, eds. Fifth International Symposium on Instrumentation and Control Technology. SPIE; 2004. doi:10.1117/12.521928
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2003 | Conference Paper | LibreCat-ID: 39887
Hilleringmann U, Vieregge T, Horstmann JT. Masking and etching of silicon and related materials for geometries down to 25 nm. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE; 2003. doi:10.1109/iecon.1999.822171
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2003 | Conference Paper | LibreCat-ID: 39888
Horstmann JT, Hilleringmann U, Goser K. Matching analysis of NMOS-transistors with a channel length down to 30 nm. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE; 2003. doi:10.1109/iecon.1999.822163
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2003 | Conference Paper | LibreCat-ID: 39885
Wirth G, Hilleringmann U, Horstmann JT, Goser K. Negative differential resistance in ultrashort bulk MOSFETs. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE; 2003. doi:10.1109/iecon.1999.822164
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2003 | Journal Article | LibreCat-ID: 39851
Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering. 2003;67-68:845-852. doi:10.1016/s0167-9317(03)00146-1
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2002 | Journal Article | LibreCat-ID: 39904
Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. IEEE Transactions on Electron Devices. 2002;42(5):841-846. doi:10.1109/16.381978
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2002 | Journal Article | LibreCat-ID: 39912
Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering. 2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j
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2002 | Journal Article | LibreCat-ID: 39914
Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q
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2002 | Journal Article | LibreCat-ID: 39906
Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714
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2002 | Journal Article | LibreCat-ID: 39907
Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714
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2002 | Journal Article | LibreCat-ID: 39899
Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4
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2002 | Journal Article | LibreCat-ID: 39925
Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985
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2002 | Journal Article | LibreCat-ID: 39882
Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1
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2002 | Journal Article | LibreCat-ID: 39879
Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9
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2002 | Conference Paper | LibreCat-ID: 39880
Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE; 2002. doi:10.1109/iecon.2000.972560
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2002 | Conference Paper | LibreCat-ID: 39881
Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE; 2002. doi:10.1109/iecon.2000.972560
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2002 | Journal Article | LibreCat-ID: 39919
Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2
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