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15 Publications


2020 | Journal Article | LibreCat-ID: 17434
InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Journal of Crystal Growth (2020).
LibreCat | DOI
 

2019 | Journal Article | LibreCat-ID: 7800
Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B
T. Henksmeier, S. Shvarkov, A. Trapp, D. Reuter, Journal of Crystal Growth 512 (2019) 164–168.
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2017 | Journal Article | LibreCat-ID: 7020
Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 481 (2017) 7–10.
LibreCat | DOI
 

2017 | Journal Article | LibreCat-ID: 7027
Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy
S. Scholz, R. Schott, P.A. Labud, C. Somsen, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 470 (2017) 46–50.
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2017 | Journal Article | LibreCat-ID: 4810
Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures
T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter, D.J. As, Journal of Crystal Growth 477 (2017) 149–153.
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2016 | Journal Article | LibreCat-ID: 7024 LibreCat | DOI
 

2013 | Journal Article | LibreCat-ID: 3959
Cubic GaN quantum dots embedded in zinc-blende AlN microdisks
M. Bürger, R.M. Kemper, C.A. Bader, M. Ruth, S. Declair, C. Meier, J. Förstner, D.J. As, Journal of Crystal Growth 378 (2013) 287–290.
LibreCat | Files available | DOI
 

2012 | Journal Article | LibreCat-ID: 4104
Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J. Lindner, Journal of Crystal Growth 378 (2012) 291–294.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 13830
Understanding the cubic AlN growth plane from first principles
E. Rauls, J. Wiebe, W.G. Schmidt, Journal of Crystal Growth 312 (2010) 2892–2895.
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2010 | Journal Article | LibreCat-ID: 7705
(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires
K. Trunov, D. Reuter, A. Ludwig, J.C.H. Chen, O. Klochan, A.P. Micolich, A.R. Hamilton, A.D. Wieck, Journal of Crystal Growth 323 (2010) 48–51.
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2010 | Journal Article | LibreCat-ID: 4144
Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4214
The effects of annealing on non-polar (112¯0) a-plane GaN films
R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.
LibreCat | Files available | DOI
 

2009 | Journal Article | LibreCat-ID: 4192
Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si
M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of Crystal Growth 312 (2009) 762–769.
LibreCat | Files available | DOI
 

2006 | Journal Article | LibreCat-ID: 7646
Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs
I. Regolin, D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner, G. Dumpich, C. Meier, A. Lorke, F.-J. Tegude, Journal of Crystal Growth 298 (2006) 607–611.
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2006 | Journal Article | LibreCat-ID: 8664
Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)
J.L. Yang, D. Reuter, A.D. Wieck, Journal of Crystal Growth (2006) 278–284.
LibreCat | DOI
 

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