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19 Publications
2022 | Journal Article | LibreCat-ID: 32108
Henksmeier, T., Schulz, J. F., Kluth, E., Feneberg, M., Goldhahn, R., Sanchez, A. M., Voigt, M., Grundmeier, G., & Reuter, D. (2022). Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates. Journal of Crystal Growth, 593, Article 126756. https://doi.org/10.1016/j.jcrysgro.2022.126756
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2022 | Journal Article | LibreCat-ID: 31241
Verma, A. K., Bopp, F., Finley, J. J., Jonas, B., Zrenner, A., & Reuter, D. (2022). Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy. Journal of Crystal Growth, Article 126715. https://doi.org/10.1016/j.jcrysgro.2022.126715
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2021 | Journal Article | LibreCat-ID: 20900
Albert, M., Golla, C., & Meier, C. (2021). Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy. Journal of Crystal Growth, 557. https://doi.org/10.1016/j.jcrysgro.2020.126009
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2020 | Journal Article | LibreCat-ID: 17434
Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., & Lindner, J. K. N. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. https://doi.org/10.1016/j.jcrysgro.2020.125597
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2020 | Journal Article | LibreCat-ID: 34091
Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., & Lindner, J. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth, 537, Article 125597. https://doi.org/10.1016/j.jcrysgro.2020.125597
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2019 | Journal Article | LibreCat-ID: 7800
Henksmeier, T., Shvarkov, S., Trapp, A., & Reuter, D. (2019). Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B. Journal of Crystal Growth, 512, 164–168. https://doi.org/10.1016/j.jcrysgro.2019.02.006
LibreCat
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2017 | Journal Article | LibreCat-ID: 4810
Wecker, T., Jostmeier, T., Rieger, T., Neumann, E., Pawlis, A., Betz, M., … As, D. J. (2017). Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures. Journal of Crystal Growth, 477, 149–153. https://doi.org/10.1016/j.jcrysgro.2017.01.022
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2017 | Journal Article | LibreCat-ID: 7020
Ritzmann, J., Schott, R., Gross, K., Reuter, D., Ludwig, A., & Wieck, A. D. (2017). Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. Journal of Crystal Growth, 481, 7–10. https://doi.org/10.1016/j.jcrysgro.2017.10.029
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2017 | Journal Article | LibreCat-ID: 7027
Scholz, S., Schott, R., Labud, P. A., Somsen, C., Reuter, D., Ludwig, A., & Wieck, A. D. (2017). Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy. Journal of Crystal Growth, 470, 46–50. https://doi.org/10.1016/j.jcrysgro.2017.04.013
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2016 | Journal Article | LibreCat-ID: 7024
Sharma, N., & Reuter, D. (2016). A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy. Journal of Crystal Growth, 477, 225–229. https://doi.org/10.1016/j.jcrysgro.2016.11.117
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2013 | Journal Article | LibreCat-ID: 3959
Bürger, M., Kemper, R. M., Bader, C. A., Ruth, M., Declair, S., Meier, C., … As, D. J. (2013). Cubic GaN quantum dots embedded in zinc-blende AlN microdisks. Journal of Crystal Growth, 378, 287–290. https://doi.org/10.1016/j.jcrysgro.2012.12.058
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2012 | Journal Article | LibreCat-ID: 4104
Kemper, R. M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf, T., … Lindner, J. (2012). Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. Journal of Crystal Growth, 378, 291–294. https://doi.org/10.1016/j.jcrysgro.2012.10.011
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2010 | Journal Article | LibreCat-ID: 7705
Trunov, K., Reuter, D., Ludwig, A., Chen, J. C. H., Klochan, O., Micolich, A. P., … Wieck, A. D. (2010). (100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires. Journal of Crystal Growth, 323(1), 48–51. https://doi.org/10.1016/j.jcrysgro.2010.11.060
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2010 | Journal Article | LibreCat-ID: 4144
Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E., … As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. Journal of Crystal Growth, 323(1), 84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042
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| DOI
2010 | Journal Article | LibreCat-ID: 4214
Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A., … Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth, 312(23), 3536–3543. https://doi.org/10.1016/j.jcrysgro.2010.08.041
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2010 | Journal Article | LibreCat-ID: 13830
Rauls, E., Wiebe, J., & Schmidt, W. G. (2010). Understanding the cubic AlN growth plane from first principles. Journal of Crystal Growth, 312, 2892–2895. https://doi.org/10.1016/j.jcrysgro.2010.07.027
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2009 | Journal Article | LibreCat-ID: 4192
Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., & Stritzker, B. (2009). Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of Crystal Growth, 312(6), 762–769. https://doi.org/10.1016/j.jcrysgro.2009.12.048
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2006 | Journal Article | LibreCat-ID: 7646
Regolin, I., Sudfeld, D., Lüttjohann, S., Khorenko, V., Prost, W., Kästner, J., … Tegude, F.-J. (2006). Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs. Journal of Crystal Growth, 298, 607–611. https://doi.org/10.1016/j.jcrysgro.2006.10.122
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2006 | Journal Article | LibreCat-ID: 8664
Yang, J. L., Reuter, D., & Wieck, A. D. (2006). Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth, 278–284. https://doi.org/10.1016/j.jcrysgro.2006.05.051
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