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12 Publications


2020 | Journal Article | LibreCat-ID: 21796
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,” Semiconductor Science and Technology, 2020.
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2019 | Journal Article | LibreCat-ID: 12930
R. Köthemann, N. Weber, J. K. N. Lindner, and C. Meier, “High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy,” Semiconductor Science and Technology, vol. 34, no. 9, 2019.
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2018 | Journal Article | LibreCat-ID: 19215
A. Kandemir et al., “Structural, electronic and phononic properties of PtSe2: from monolayer to bulk,” Semiconductor Science and Technology, 2018.
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2018 | Journal Article | LibreCat-ID: 7009
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures,” Semiconductor Science and Technology, vol. 33, no. 9, 2018.
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2013 | Journal Article | LibreCat-ID: 7282
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 8, 2013.
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2013 | Journal Article | LibreCat-ID: 7295
E. J. Koop et al., “On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 2, 2013.
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2011 | Journal Article | LibreCat-ID: 4545
V. Wiedemeier et al., “In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy,” Semiconductor Science and Technology, vol. 26, no. 10, 2011.
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2010 | Journal Article | LibreCat-ID: 4549
E. M. Larramendi et al., “Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers,” Semiconductor Science and Technology, vol. 25, no. 7, 2010.
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2005 | Journal Article | LibreCat-ID: 8693
M. Knop et al., “Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene,” Semiconductor Science and Technology, pp. 814–818, 2005.
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2004 | Journal Article | LibreCat-ID: 8692
D. Kähler, M. Knop, U. Kunze, D. Reuter, and A. D. Wieck, “Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation,” Semiconductor Science and Technology, pp. 140–143, 2004.
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2002 | Journal Article | LibreCat-ID: 8747
D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002.
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2002 | Journal Article | LibreCat-ID: 8768
D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002.
LibreCat | DOI
 

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