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19 Publications


2022 | Journal Article | LibreCat-ID: 32108
Henksmeier, T., J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, Guido Grundmeier, and Dirk Reuter. “Remote Epitaxy of InxGa1-XAs (0 0 1) on Graphene Covered GaAs(0 0 1) Substrates.” Journal of Crystal Growth 593 (2022). https://doi.org/10.1016/j.jcrysgro.2022.126756.
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2022 | Journal Article | LibreCat-ID: 31241
Verma, A.K., F. Bopp, J.J. Finley, B. Jonas, A. Zrenner, and Dirk Reuter. “Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy.” Journal of Crystal Growth, 2022. https://doi.org/10.1016/j.jcrysgro.2022.126715.
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2021 | Journal Article | LibreCat-ID: 20900
Albert, M., C. Golla, and Cedrik Meier. “Optical In-Situ Temperature Management for High-Quality ZnO Molecular Beam Epitaxy.” Journal of Crystal Growth 557 (2021). https://doi.org/10.1016/j.jcrysgro.2020.126009.
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2020 | Journal Article | LibreCat-ID: 17434
Kunnathully, Vinay S., Thomas Riedl, Alexander Trapp, Timo Langer, Dirk Reuter, and Jörg K.N. Lindner. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.” Journal of Crystal Growth, 2020. https://doi.org/10.1016/j.jcrysgro.2020.125597.
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2020 | Journal Article | LibreCat-ID: 34091
Kunnathully, Vinay S., Thomas Riedl, Alexander Trapp, Timo Langer, Dirk Reuter, and Jörg Lindner. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.” Journal of Crystal Growth 537 (2020). https://doi.org/10.1016/j.jcrysgro.2020.125597.
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2019 | Journal Article | LibreCat-ID: 7800
Henksmeier, Tobias, Stepan Shvarkov, Alexander Trapp, and Dirk Reuter. “Molecular Beam Epitaxy Growth and Temperature-Dependent Electrical Characterization of Carbon-Doped GaAs on GaAs(1 1 1)B.” Journal of Crystal Growth 512 (2019): 164–68. https://doi.org/10.1016/j.jcrysgro.2019.02.006.
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2017 | Journal Article | LibreCat-ID: 4810
Wecker, T., T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, Dirk Reuter, and Donat Josef As. “Linear and Nonlinear Behaviour of Near-IR Intersubband Transitions of Cubic GaN/AlN Multi Quantum Well Structures.” Journal of Crystal Growth 477 (2017): 149–53. https://doi.org/10.1016/j.jcrysgro.2017.01.022.
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2017 | Journal Article | LibreCat-ID: 7020
Ritzmann, Julian, Rüdiger Schott, Katherine Gross, Dirk Reuter, Arne Ludwig, and Andreas D. Wieck. “Overcoming Ehrlich-Schwöbel Barrier in (1 1 1)A GaAs Molecular Beam Epitaxy.” Journal of Crystal Growth 481 (2017): 7–10. https://doi.org/10.1016/j.jcrysgro.2017.10.029.
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2017 | Journal Article | LibreCat-ID: 7027
Scholz, Sven, Rüdiger Schott, Patrick A. Labud, Christoph Somsen, Dirk Reuter, Arne Ludwig, and Andreas D. Wieck. “Focused Ion Beam Supported Growth of Monocrystalline Wurtzite InAs Nanowires Grown by Molecular Beam Epitaxy.” Journal of Crystal Growth 470 (2017): 46–50. https://doi.org/10.1016/j.jcrysgro.2017.04.013.
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2016 | Journal Article | LibreCat-ID: 7024
Sharma, Nandlal, and Dirk Reuter. “A Modified Gradient Approach for the Growth of Low-Density InAs Quantum Dot Molecules by Molecular Beam Epitaxy.” Journal of Crystal Growth 477 (2016): 225–29. https://doi.org/10.1016/j.jcrysgro.2016.11.117.
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2013 | Journal Article | LibreCat-ID: 3959
Bürger, M., R.M. Kemper, C.A. Bader, M. Ruth, S. Declair, Cedrik Meier, Jens Förstner, and D.J. As. “Cubic GaN Quantum Dots Embedded in Zinc-Blende AlN Microdisks.” Journal of Crystal Growth 378 (2013): 287–90. https://doi.org/10.1016/j.jcrysgro.2012.12.058.
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2012 | Journal Article | LibreCat-ID: 4104
Kemper, R.M., L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” Journal of Crystal Growth 378 (2012): 291–94. https://doi.org/10.1016/j.jcrysgro.2012.10.011.
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2010 | Journal Article | LibreCat-ID: 7705
Trunov, K., Dirk Reuter, A. Ludwig, J.C.H. Chen, O. Klochan, A.P. Micolich, A.R. Hamilton, and A.D. Wieck. “(100) GaAs/AlxGa1−xAs Heterostructures for Zeeman Spin Splitting Studies of Hole Quantum Wires.” Journal of Crystal Growth 323, no. 1 (2010): 48–51. https://doi.org/10.1016/j.jcrysgro.2010.11.060.
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2010 | Journal Article | LibreCat-ID: 4144
Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, Jörg Lindner, K. Lischka, and Donald As. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” Journal of Crystal Growth 323, no. 1 (2010): 84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042.
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2010 | Journal Article | LibreCat-ID: 4214
Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” Journal of Crystal Growth 312, no. 23 (2010): 3536–43. https://doi.org/10.1016/j.jcrysgro.2010.08.041.
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2010 | Journal Article | LibreCat-ID: 13830
Rauls, E., J. Wiebe, and Wolf Gero Schmidt. “Understanding the Cubic AlN Growth Plane from First Principles.” Journal of Crystal Growth 312 (2010): 2892–95. https://doi.org/10.1016/j.jcrysgro.2010.07.027.
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2009 | Journal Article | LibreCat-ID: 4192
Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth 312, no. 6 (2009): 762–69. https://doi.org/10.1016/j.jcrysgro.2009.12.048.
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2006 | Journal Article | LibreCat-ID: 7646
Regolin, I., D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner, G. Dumpich, Cedrik Meier, A. Lorke, and F.-J. Tegude. “Growth and Characterisation of GaAs/InGaAs/GaAs Nanowhiskers on (111) GaAs.” Journal of Crystal Growth 298 (2006): 607–11. https://doi.org/10.1016/j.jcrysgro.2006.10.122.
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2006 | Journal Article | LibreCat-ID: 8664
Yang, J.L., Dirk Reuter, and A.D. Wieck. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).” Journal of Crystal Growth, 2006, 278–84. https://doi.org/10.1016/j.jcrysgro.2006.05.051.
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