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18 Publications


2022 | Journal Article | LibreCat-ID: 31241
A. K. Verma, F. Bopp, J. J. Finley, B. Jonas, A. Zrenner, and D. Reuter, “Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy,” Journal of Crystal Growth, Art. no. 126715, 2022, doi: 10.1016/j.jcrysgro.2022.126715.
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2022 | Journal Article | LibreCat-ID: 32108
T. Henksmeier et al., “Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates,” Journal of Crystal Growth, vol. 593, Art. no. 126756, 2022, doi: 10.1016/j.jcrysgro.2022.126756.
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2021 | Journal Article | LibreCat-ID: 20900
M. Albert, C. Golla, and C. Meier, “Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy,” Journal of Crystal Growth, vol. 557, 2021.
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2020 | Journal Article | LibreCat-ID: 17434
V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. K. N. Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” Journal of Crystal Growth, 2020.
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2019 | Journal Article | LibreCat-ID: 7800
T. Henksmeier, S. Shvarkov, A. Trapp, and D. Reuter, “Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B,” Journal of Crystal Growth, vol. 512, pp. 164–168, 2019.
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2017 | Journal Article | LibreCat-ID: 4810
T. Wecker et al., “Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures,” Journal of Crystal Growth, vol. 477, pp. 149–153, 2017.
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2017 | Journal Article | LibreCat-ID: 7020
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, and A. D. Wieck, “Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy,” Journal of Crystal Growth, vol. 481, pp. 7–10, 2017.
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2017 | Journal Article | LibreCat-ID: 7027
S. Scholz et al., “Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy,” Journal of Crystal Growth, vol. 470, pp. 46–50, 2017.
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2016 | Journal Article | LibreCat-ID: 7024
N. Sharma and D. Reuter, “A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy,” Journal of Crystal Growth, vol. 477, pp. 225–229, 2016.
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2013 | Journal Article | LibreCat-ID: 3959
M. Bürger et al., “Cubic GaN quantum dots embedded in zinc-blende AlN microdisks,” Journal of Crystal Growth, vol. 378, pp. 287–290, 2013.
LibreCat | Files available | DOI
 

2012 | Journal Article | LibreCat-ID: 4104
R. M. Kemper et al., “Growth of cubic GaN on 3C–SiC/Si (001) nanostructures,” Journal of Crystal Growth, vol. 378, pp. 291–294, 2012.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 7705
K. Trunov et al., “(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires,” Journal of Crystal Growth, vol. 323, no. 1, pp. 48–51, 2010.
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2010 | Journal Article | LibreCat-ID: 4144
R. M. Kemper et al., “Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates,” Journal of Crystal Growth, vol. 323, no. 1, pp. 84–87, 2010.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4214
R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543, 2010.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 13830
E. Rauls, J. Wiebe, and W. G. Schmidt, “Understanding the cubic AlN growth plane from first principles,” Journal of Crystal Growth, vol. 312, pp. 2892–2895, 2010.
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2009 | Journal Article | LibreCat-ID: 4192
M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,” Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009.
LibreCat | Files available | DOI
 

2006 | Journal Article | LibreCat-ID: 7646
I. Regolin et al., “Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs,” Journal of Crystal Growth, vol. 298, pp. 607–611, 2006.
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2006 | Journal Article | LibreCat-ID: 8664
J. L. Yang, D. Reuter, and A. D. Wieck, “Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100),” Journal of Crystal Growth, pp. 278–284, 2006.
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