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15 Publications


2020 | Journal Article | LibreCat-ID: 17434
V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. K. N. Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” Journal of Crystal Growth, 2020.
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2019 | Journal Article | LibreCat-ID: 7800
T. Henksmeier, S. Shvarkov, A. Trapp, and D. Reuter, “Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B,” Journal of Crystal Growth, vol. 512, pp. 164–168, 2019.
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2017 | Journal Article | LibreCat-ID: 7020
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, and A. D. Wieck, “Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy,” Journal of Crystal Growth, vol. 481, pp. 7–10, 2017.
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2017 | Journal Article | LibreCat-ID: 7027
S. Scholz et al., “Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy,” Journal of Crystal Growth, vol. 470, pp. 46–50, 2017.
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2017 | Journal Article | LibreCat-ID: 4810
T. Wecker et al., “Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures,” Journal of Crystal Growth, vol. 477, pp. 149–153, 2017.
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2016 | Journal Article | LibreCat-ID: 7024
N. Sharma and D. Reuter, “A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy,” Journal of Crystal Growth, vol. 477, pp. 225–229, 2016.
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2013 | Journal Article | LibreCat-ID: 3959
M. Bürger et al., “Cubic GaN quantum dots embedded in zinc-blende AlN microdisks,” Journal of Crystal Growth, vol. 378, pp. 287–290, 2013.
LibreCat | Files available | DOI
 

2012 | Journal Article | LibreCat-ID: 4104
R. M. Kemper et al., “Growth of cubic GaN on 3C–SiC/Si (001) nanostructures,” Journal of Crystal Growth, vol. 378, pp. 291–294, 2012.
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2010 | Journal Article | LibreCat-ID: 13830
E. Rauls, J. Wiebe, and W. G. Schmidt, “Understanding the cubic AlN growth plane from first principles,” Journal of Crystal Growth, vol. 312, pp. 2892–2895, 2010.
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2010 | Journal Article | LibreCat-ID: 7705
K. Trunov et al., “(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires,” Journal of Crystal Growth, vol. 323, no. 1, pp. 48–51, 2010.
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2010 | Journal Article | LibreCat-ID: 4144
R. M. Kemper et al., “Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates,” Journal of Crystal Growth, vol. 323, no. 1, pp. 84–87, 2010.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4214
R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543, 2010.
LibreCat | Files available | DOI
 

2009 | Journal Article | LibreCat-ID: 4192
M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,” Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009.
LibreCat | Files available | DOI
 

2006 | Journal Article | LibreCat-ID: 7646
I. Regolin et al., “Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs,” Journal of Crystal Growth, vol. 298, pp. 607–611, 2006.
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2006 | Journal Article | LibreCat-ID: 8664
J. L. Yang, D. Reuter, and A. D. Wieck, “Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100),” Journal of Crystal Growth, pp. 278–284, 2006.
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