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18 Publications


2022 | Journal Article | LibreCat-ID: 31241
Verma AK, Bopp F, Finley JJ, Jonas B, Zrenner A, Reuter D. Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy. Journal of Crystal Growth. Published online 2022. doi:10.1016/j.jcrysgro.2022.126715
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2022 | Journal Article | LibreCat-ID: 32108
Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates. Journal of Crystal Growth. 2022;593. doi:10.1016/j.jcrysgro.2022.126756
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2021 | Journal Article | LibreCat-ID: 20900
Albert M, Golla C, Meier C. Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy. Journal of Crystal Growth. 2021;557. doi:10.1016/j.jcrysgro.2020.126009
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2020 | Journal Article | LibreCat-ID: 17434
Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner JKN. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020. doi:10.1016/j.jcrysgro.2020.125597
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2019 | Journal Article | LibreCat-ID: 7800
Henksmeier T, Shvarkov S, Trapp A, Reuter D. Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B. Journal of Crystal Growth. 2019;512:164-168. doi:10.1016/j.jcrysgro.2019.02.006
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2017 | Journal Article | LibreCat-ID: 4810
Wecker T, Jostmeier T, Rieger T, et al. Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures. Journal of Crystal Growth. 2017;477:149-153. doi:10.1016/j.jcrysgro.2017.01.022
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2017 | Journal Article | LibreCat-ID: 7020
Ritzmann J, Schott R, Gross K, Reuter D, Ludwig A, Wieck AD. Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. Journal of Crystal Growth. 2017;481:7-10. doi:10.1016/j.jcrysgro.2017.10.029
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2017 | Journal Article | LibreCat-ID: 7027
Scholz S, Schott R, Labud PA, et al. Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy. Journal of Crystal Growth. 2017;470:46-50. doi:10.1016/j.jcrysgro.2017.04.013
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2016 | Journal Article | LibreCat-ID: 7024
Sharma N, Reuter D. A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy. Journal of Crystal Growth. 2016;477:225-229. doi:10.1016/j.jcrysgro.2016.11.117
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2013 | Journal Article | LibreCat-ID: 3959
Bürger M, Kemper RM, Bader CA, et al. Cubic GaN quantum dots embedded in zinc-blende AlN microdisks. Journal of Crystal Growth. 2013;378:287-290. doi:10.1016/j.jcrysgro.2012.12.058
LibreCat | Files available | DOI
 

2012 | Journal Article | LibreCat-ID: 4104
Kemper RM, Hiller L, Stauden T, et al. Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. Journal of Crystal Growth. 2012;378:291-294. doi:10.1016/j.jcrysgro.2012.10.011
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 7705
Trunov K, Reuter D, Ludwig A, et al. (100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires. Journal of Crystal Growth. 2010;323(1):48-51. doi:10.1016/j.jcrysgro.2010.11.060
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2010 | Journal Article | LibreCat-ID: 4144
Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. Journal of Crystal Growth. 2010;323(1):84-87. doi:10.1016/j.jcrysgro.2010.12.042
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2010 | Journal Article | LibreCat-ID: 4214
Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth. 2010;312(23):3536-3543. doi:10.1016/j.jcrysgro.2010.08.041
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2010 | Journal Article | LibreCat-ID: 13830
Rauls E, Wiebe J, Schmidt WG. Understanding the cubic AlN growth plane from first principles. Journal of Crystal Growth. 2010;312:2892-2895. doi:10.1016/j.jcrysgro.2010.07.027
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2009 | Journal Article | LibreCat-ID: 4192
Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of Crystal Growth. 2009;312(6):762-769. doi:10.1016/j.jcrysgro.2009.12.048
LibreCat | Files available | DOI
 

2006 | Journal Article | LibreCat-ID: 7646
Regolin I, Sudfeld D, Lüttjohann S, et al. Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs. Journal of Crystal Growth. 2006;298:607-611. doi:10.1016/j.jcrysgro.2006.10.122
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2006 | Journal Article | LibreCat-ID: 8664
Yang JL, Reuter D, Wieck AD. Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth. 2006:278-284. doi:10.1016/j.jcrysgro.2006.05.051
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