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14 Publications
2020 | Journal Article | LibreCat-ID: 21796
Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2020). Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/ab89e1
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2019 | Journal Article | LibreCat-ID: 12930
Köthemann, R., Weber, N., Lindner, J. K. N., & Meier, C. (2019). High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy. Semiconductor Science and Technology, 34(9). https://doi.org/10.1088/1361-6641/ab3536
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2018 | Journal Article | LibreCat-ID: 19215
Kandemir, A., Akbali, B., Kahraman, Z., Badalov, S. V., Ozcan, M., Iyikanat, F., & Sahin, H. (2018). Structural, electronic and phononic properties of PtSe2: from monolayer to bulk. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/aacba2
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2018 | Journal Article | LibreCat-ID: 7009
Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2018). Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology, 33(9). https://doi.org/10.1088/1361-6641/aad83d
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2013 | Journal Article | LibreCat-ID: 7282
Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2013). Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology, 28(8). https://doi.org/10.1088/0268-1242/28/8/085012
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2013 | Journal Article | LibreCat-ID: 7295
Koop, E. J., Iqbal, M. J., Limbach, F., Boute, M., van Wees, B. J., Reuter, D., … van der Wal, C. H. (2013). On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures. Semiconductor Science and Technology, 28(2). https://doi.org/10.1088/0268-1242/28/2/025006
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2011 | Journal Article | LibreCat-ID: 4545
Wiedemeier, V., Berth, G., Zrenner, A., Larramendi, E. M., Woggon, U., Lischka, K., & Schikora, D. (2011). In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor Science and Technology, 26(10). https://doi.org/10.1088/0268-1242/26/10/105023
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2010 | Journal Article | LibreCat-ID: 4549
Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon, U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology, 25(7). https://doi.org/10.1088/0268-1242/25/7/075003
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2005 | Journal Article | LibreCat-ID: 8693
Knop, M., Richter, M., Maßmann, R., Wieser, U., Kunze, U., Reuter, D., … Wieck, A. D. (2005). Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science and Technology, 814–818. https://doi.org/10.1088/0268-1242/20/8/031
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2004 | Journal Article | LibreCat-ID: 8692
Kähler, D., Knop, M., Kunze, U., Reuter, D., & Wieck, A. D. (2004). Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology, 140–143. https://doi.org/10.1088/0268-1242/20/2/006
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