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13 Publications


2019 | Journal Article | LibreCat-ID: 12930
R. Köthemann, N. Weber, J. K. N. Lindner, and C. Meier, “High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy,” Semiconductor Science and Technology, vol. 34, no. 9, 2019.
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2018 | Journal Article | LibreCat-ID: 19215
A. Kandemir et al., “Structural, electronic and phononic properties of PtSe2: from monolayer to bulk,” Semiconductor Science and Technology, 2018.
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2018 | Journal Article | LibreCat-ID: 7009
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures,” Semiconductor Science and Technology, vol. 33, no. 9, 2018.
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2013 | Journal Article | LibreCat-ID: 7282
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 8, 2013.
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2013 | Journal Article | LibreCat-ID: 7295
E. J. Koop et al., “On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 2, 2013.
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2011 | Journal Article | LibreCat-ID: 4545
V. Wiedemeier et al., “In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy,” Semiconductor Science and Technology, vol. 26, no. 10, 2011.
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2010 | Journal Article | LibreCat-ID: 4549
E. M. Larramendi et al., “Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers,” Semiconductor Science and Technology, vol. 25, no. 7, 2010.
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2005 | Journal Article | LibreCat-ID: 8693
M. Knop et al., “Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene,” Semiconductor Science and Technology, pp. 814–818, 2005.
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2004 | Journal Article | LibreCat-ID: 8692
D. Kähler, M. Knop, U. Kunze, D. Reuter, and A. D. Wieck, “Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation,” Semiconductor Science and Technology, pp. 140–143, 2004.
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2003 | Journal Article | LibreCat-ID: 8730
G. Apetrii, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope,” Semiconductor Science and Technology, pp. 735–739, 2003.
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