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14 Publications


2020 | Journal Article | LibreCat-ID: 21796
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,” Semiconductor Science and Technology, 2020.
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2019 | Journal Article | LibreCat-ID: 12930
R. Köthemann, N. Weber, J. K. N. Lindner, and C. Meier, “High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy,” Semiconductor Science and Technology, vol. 34, no. 9, 2019.
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2018 | Journal Article | LibreCat-ID: 19215
A. Kandemir et al., “Structural, electronic and phononic properties of PtSe2: from monolayer to bulk,” Semiconductor Science and Technology, 2018.
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2018 | Journal Article | LibreCat-ID: 7009
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures,” Semiconductor Science and Technology, vol. 33, no. 9, 2018.
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2013 | Journal Article | LibreCat-ID: 7282
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 8, 2013.
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2013 | Journal Article | LibreCat-ID: 7295
E. J. Koop et al., “On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 2, 2013.
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2011 | Journal Article | LibreCat-ID: 4545
V. Wiedemeier et al., “In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy,” Semiconductor Science and Technology, vol. 26, no. 10, 2011.
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2010 | Journal Article | LibreCat-ID: 4549
E. M. Larramendi et al., “Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers,” Semiconductor Science and Technology, vol. 25, no. 7, 2010.
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2005 | Journal Article | LibreCat-ID: 8693
M. Knop et al., “Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene,” Semiconductor Science and Technology, pp. 814–818, 2005.
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2004 | Journal Article | LibreCat-ID: 8692
D. Kähler, M. Knop, U. Kunze, D. Reuter, and A. D. Wieck, “Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation,” Semiconductor Science and Technology, pp. 140–143, 2004.
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2003 | Journal Article | LibreCat-ID: 8730
G. Apetrii, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope,” Semiconductor Science and Technology, pp. 735–739, 2003.
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2002 | Journal Article | LibreCat-ID: 7684
D. Reuter, C. Meier, C. Riedesel, and A. D. Wieck, “Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping,” Semiconductor Science and Technology, vol. 17, no. 6, pp. 585–589, 2002.
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2002 | Journal Article | LibreCat-ID: 8747
D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002.
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2002 | Journal Article | LibreCat-ID: 8768
D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002.
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