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14 Publications
2020 | Journal Article | LibreCat-ID: 21796
Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. 2020. doi:10.1088/1361-6641/ab89e1
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2019 | Journal Article | LibreCat-ID: 12930
Köthemann R, Weber N, Lindner JKN, Meier C. High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy. Semiconductor Science and Technology. 2019;34(9). doi:10.1088/1361-6641/ab3536
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2018 | Journal Article | LibreCat-ID: 19215
Kandemir A, Akbali B, Kahraman Z, et al. Structural, electronic and phononic properties of PtSe2: from monolayer to bulk. Semiconductor Science and Technology. 2018. doi:10.1088/1361-6641/aacba2
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2018 | Journal Article | LibreCat-ID: 7009
Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology. 2018;33(9). doi:10.1088/1361-6641/aad83d
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2013 | Journal Article | LibreCat-ID: 7282
Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology. 2013;28(8). doi:10.1088/0268-1242/28/8/085012
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2013 | Journal Article | LibreCat-ID: 7295
Koop EJ, Iqbal MJ, Limbach F, et al. On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures. Semiconductor Science and Technology. 2013;28(2). doi:10.1088/0268-1242/28/2/025006
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2011 | Journal Article | LibreCat-ID: 4545
Wiedemeier V, Berth G, Zrenner A, et al. In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor Science and Technology. 2011;26(10). doi:10.1088/0268-1242/26/10/105023
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2010 | Journal Article | LibreCat-ID: 4549
Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology. 2010;25(7). doi:10.1088/0268-1242/25/7/075003
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2005 | Journal Article | LibreCat-ID: 8693
Knop M, Richter M, Maßmann R, et al. Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science and Technology. 2005:814-818. doi:10.1088/0268-1242/20/8/031
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2004 | Journal Article | LibreCat-ID: 8692
Kähler D, Knop M, Kunze U, Reuter D, Wieck AD. Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology. 2004:140-143. doi:10.1088/0268-1242/20/2/006
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2003 | Journal Article | LibreCat-ID: 8730
Apetrii G, Fischer SF, Kunze U, Reuter D, Wieck AD. Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. Semiconductor Science and Technology. 2003:735-739. doi:10.1088/0268-1242/17/7/317
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2002 | Journal Article | LibreCat-ID: 7684
Reuter D, Meier C, Riedesel C, Wieck AD. Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology. 2002;17(6):585-589. doi:10.1088/0268-1242/17/6/315
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2002 | Journal Article | LibreCat-ID: 8747
Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
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2002 | Journal Article | LibreCat-ID: 8768
Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
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