Donat Josef As

Center for Optoelectronics and Photonics (CeOPP)
Sonderforschungsbereich Transregio 142
d.as@uni-paderborn.de
ID
14

45 Publications

Mark all

[45]
2023 | Journal Article | LibreCat-ID: 46132
M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,” physica status solidi (b), vol. 260, no. 7, 2023, doi: 10.1002/pssb.202300034.
LibreCat | DOI
 
[44]
2023 | Journal Article | LibreCat-ID: 46741
M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN,” ACS Applied Materials & Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi: 10.1021/acsami.3c06319.
LibreCat | DOI
 
[43]
2023 | Journal Article | LibreCat-ID: 46573
E. Baron et al., “Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function,” Journal of Applied Physics, vol. 134, no. 7, 2023, doi: 10.1063/5.0153091.
LibreCat | DOI
 
[42]
2022 | Journal Article | LibreCat-ID: 35232
F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,” physica status solidi (b), Art. no. 2200508, 2022, doi: 10.1002/pssb.202200508.
LibreCat | DOI
 
[41]
2021 | Journal Article | LibreCat-ID: 23842
E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, and D. J. As, “Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system,” Journal of Physics D: Applied Physics, 2021.
LibreCat | DOI
 
[40]
2021 | Journal Article | LibreCat-ID: 25227 | OA
M. Hajlaoui et al., “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,” Scientific Reports, vol. 11, Art. no. 19081, 2021, doi: 10.1038/s41598-021-98569-6.
LibreCat | DOI | Download (ext.)
 
[39]
2021 | Journal Article | LibreCat-ID: 23843
F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” AIP Advances, Art. no. 075013, 2021, doi: 10.1063/5.0053865.
LibreCat | DOI
 
[38]
2020 | Journal Article | LibreCat-ID: 23838
A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,” Journal of Electronic Materials, pp. 2008–2017, 2020.
LibreCat | DOI
 
[37]
2020 | Journal Article | LibreCat-ID: 23840
E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” physica status solidi (b), 2020.
LibreCat | DOI
 
[36]
2020 | Journal Article | LibreCat-ID: 23841
M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), 2020.
LibreCat | DOI
 
[35]
2019 | Journal Article | LibreCat-ID: 23831
E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3,” Physical Review Materials, 2019.
LibreCat | DOI
 
[34]
2019 | Journal Article | LibreCat-ID: 8646
M. Deppe et al., “Germanium doping of cubic GaN grown by molecular beam epitaxy,” Journal of Applied Physics, 2019.
LibreCat | DOI
 
[33]
2019 | Journal Article | LibreCat-ID: 13965
J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Optical excitation density dependence of spin dynamics in bulk cubic GaN,” Journal of Applied Physics, 2019.
LibreCat | DOI
 
[32]
2019 | Journal Article | LibreCat-ID: 13966
E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3,” Physical Review Materials, 2019.
LibreCat | DOI
 
[31]
2019 | Journal Article | LibreCat-ID: 15444 | OA
M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), Art. no. 1900532, 2019, doi: 10.1002/pssb.201900532.
LibreCat | DOI | Download (ext.)
 
[30]
2018 | Journal Article | LibreCat-ID: 4809
L. K. S. Herval, M. P. F. de Godoy, T. Wecker, and D. J. As, “Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures,” Journal of Luminescence, vol. 198, pp. 309–313, 2018.
LibreCat | DOI
 
[29]
2018 | Journal Article | LibreCat-ID: 7022
S. Blumenthal, D. Reuter, and D. J. As, “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 5, 2018.
LibreCat | DOI
 
[28]
2018 | Book Chapter | LibreCat-ID: 4350
D. J. As and K. Lischka, “Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications,” in Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.
LibreCat | DOI
 
[27]
2018 | Journal Article | LibreCat-ID: 20588
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As, “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 3, p. 1600729, 2018, doi: https://doi.org/10.1002/pssb.201600729.
LibreCat | DOI
 
[26]
2017 | Journal Article | LibreCat-ID: 4808
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells,” physica status solidi (b), vol. 255, no. 5, 2017.
LibreCat | DOI
 
[25]
2017 | Journal Article | LibreCat-ID: 4810
T. Wecker et al., “Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures,” Journal of Crystal Growth, vol. 477, pp. 149–153, 2017.
LibreCat | DOI
 
[24]
2017 | Journal Article | LibreCat-ID: 4811
M. Deppe, J. W. Gerlach, D. Reuter, and D. J. As, “Incorporation of germanium for n-type doping of cubic GaN,” physica status solidi (b), vol. 254, no. 8, 2017.
LibreCat | DOI
 
[23]
2017 | Journal Article | LibreCat-ID: 4812
T. Czerniuk et al., “Picosecond Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N,” Physical Review Applied, vol. 7, no. 1, 2017.
LibreCat | DOI
 
[22]
2017 | Journal Article | LibreCat-ID: 4813
D. J. As, M. Deppe, J. Gerlach, and D. Reuter, “Optical Properties of Germanium Doped Cubic GaN,” MRS Advances, vol. 2, no. 05, pp. 283–288, 2017.
LibreCat | DOI
 
[21]
2016 | Journal Article | LibreCat-ID: 4814
J. H. Buß, T. Schupp, D. J. As, O. Brandt, D. Hägele, and J. Rudolph, “Electron spin dynamics in cubic GaN,” Physical Review B, vol. 94, no. 23, 2016.
LibreCat | DOI
 
[20]
2016 | Journal Article | LibreCat-ID: 4815
V. A. N. Righetti et al., “Magnetic and structural properties of Fe-implanted cubic GaN,” Journal of Applied Physics, vol. 120, no. 10, 2016.
LibreCat | DOI
 
[19]
2016 | Journal Article | LibreCat-ID: 4817
C. Rothfuchs et al., “Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots,” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 383, pp. 1–5, 2016.
LibreCat | DOI
 
[18]
2016 | Journal Article | LibreCat-ID: 7055
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy,” Japanese Journal of Applied Physics, vol. 55, no. 5S, 2016.
LibreCat | DOI
 
[17]
2016 | Journal Article | LibreCat-ID: 3888
S. Blumenthal et al., “Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,” physica status solidi (c), vol. 13, no. 5–6, pp. 292–296, 2016, doi: 10.1002/pssc.201600010.
LibreCat | Files available | DOI
 
[16]
2016 | Journal Article | LibreCat-ID: 4240
M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” physica status solidi (b), vol. 253, no. 4, pp. 778–782, 2016, doi: 10.1002/pssb.201552592.
LibreCat | DOI
 
[15]
2015 | Journal Article | LibreCat-ID: 4819
S. Sergent et al., “Active zinc-blende III–nitride photonic structures on silicon,” Applied Physics Express, vol. 9, no. 1, 2015.
LibreCat | DOI
 
[14]
2015 | Journal Article | LibreCat-ID: 4820
J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Temperature dependence of the electron Landé g-factor in cubic GaN,” Journal of Applied Physics, vol. 118, no. 22, 2015.
LibreCat | DOI
 
[13]
2015 | Journal Article | LibreCat-ID: 4825
A. Schaefer et al., “Strain dependent electron spin dynamics in bulk cubic GaN,” Journal of Applied Physics, vol. 117, no. 9, 2015.
LibreCat | DOI
 
[12]
2015 | Journal Article | LibreCat-ID: 7217
T. Jostmeier, T. Wecker, D. Reuter, D. J. As, and M. Betz, “Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice,” Applied Physics Letters, vol. 107, no. 21, 2015.
LibreCat | DOI
 
[11]
2014 | Journal Article | LibreCat-ID: 4824
T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, and D. J. As, “Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells,” physica status solidi (b), vol. 252, no. 5, pp. 873–878, 2014.
LibreCat | DOI
 
[10]
2014 | Journal Article | LibreCat-ID: 8762
S. Sergent, S. Kako, M. Bürger, T. Schupp, D. J. As, and Y. Arakawa, “Polarization properties of single zinc-blende GaN/AlN quantum dots,” Physical Review B, 2014.
LibreCat | DOI
 
[9]
2014 | Journal Article | LibreCat-ID: 4064
L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt, “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures,” Materials Science Forum, vol. 778–780, pp. 730–733, 2014, doi: 10.4028/www.scientific.net/msf.778-780.730.
LibreCat | Files available | DOI
 
[8]
2013 | Journal Article | LibreCat-ID: 3963 | OA
M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,” Applied Physics Letters, vol. 102, no. 8, p. 081105, 2013.
LibreCat | Files available | DOI
 
[7]
2013 | Journal Article | LibreCat-ID: 13524
M. Landmann et al., “Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN,” Physical Review B, vol. 87, no. 19, 2013, doi: 10.1103/physrevb.87.195210.
LibreCat | DOI
 
[6]
2012 | Journal Article | LibreCat-ID: 4333
M. Feneberg et al., “Optical properties of cubic GaN from 1 to 20 eV,” Physical Review B, vol. 85, no. 15, 2012.
LibreCat | DOI
 
[5]
2012 | Journal Article | LibreCat-ID: 4116
L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt, “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures,” Materials Science Forum, vol. 717–720, pp. 901–904, 2012, doi: 10.4028/www.scientific.net/msf.717-720.901.
LibreCat | Files available | DOI
 
[4]
2011 | Journal Article | LibreCat-ID: 13568
C. Mietze et al., “Band offsets in cubic GaN/AlN superlattices,” Physical Review B, vol. 83, no. 19, 2011.
LibreCat | DOI
 
[3]
2011 | Journal Article | LibreCat-ID: 4146
R. Maria Kemper et al., “Anti-phase domains in cubic GaN,” Journal of Applied Physics, vol. 110, no. 12, Art. no. 123512, 2011, doi: 10.1063/1.3666050.
LibreCat | Files available | DOI
 
[2]
2010 | Journal Article | LibreCat-ID: 13835
A. Scholle et al., “Magnetic characterization of conductance electrons in GaN,” physica status solidi (b), vol. 247, no. 7, pp. 1728–1731, 2010.
LibreCat | DOI
 
[1]
2009 | Conference Paper | LibreCat-ID: 4218
D. J. As, E. Tschumak, I. Laubenstein, R. M. Kemper, and K. Lischka, “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers,” in Materials Research Society Symposium Proceedings, 2009, vol. 1108, pp. 3–8, doi: 10.1557/proc-1108-a01-02.
LibreCat | DOI
 
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45 Publications

Mark all

[45]
2023 | Journal Article | LibreCat-ID: 46132
M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,” physica status solidi (b), vol. 260, no. 7, 2023, doi: 10.1002/pssb.202300034.
LibreCat | DOI
 
[44]
2023 | Journal Article | LibreCat-ID: 46741
M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN,” ACS Applied Materials & Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi: 10.1021/acsami.3c06319.
LibreCat | DOI
 
[43]
2023 | Journal Article | LibreCat-ID: 46573
E. Baron et al., “Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function,” Journal of Applied Physics, vol. 134, no. 7, 2023, doi: 10.1063/5.0153091.
LibreCat | DOI
 
[42]
2022 | Journal Article | LibreCat-ID: 35232
F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,” physica status solidi (b), Art. no. 2200508, 2022, doi: 10.1002/pssb.202200508.
LibreCat | DOI
 
[41]
2021 | Journal Article | LibreCat-ID: 23842
E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, and D. J. As, “Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system,” Journal of Physics D: Applied Physics, 2021.
LibreCat | DOI
 
[40]
2021 | Journal Article | LibreCat-ID: 25227 | OA
M. Hajlaoui et al., “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,” Scientific Reports, vol. 11, Art. no. 19081, 2021, doi: 10.1038/s41598-021-98569-6.
LibreCat | DOI | Download (ext.)
 
[39]
2021 | Journal Article | LibreCat-ID: 23843
F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” AIP Advances, Art. no. 075013, 2021, doi: 10.1063/5.0053865.
LibreCat | DOI
 
[38]
2020 | Journal Article | LibreCat-ID: 23838
A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs,” Journal of Electronic Materials, pp. 2008–2017, 2020.
LibreCat | DOI
 
[37]
2020 | Journal Article | LibreCat-ID: 23840
E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” physica status solidi (b), 2020.
LibreCat | DOI
 
[36]
2020 | Journal Article | LibreCat-ID: 23841
M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), 2020.
LibreCat | DOI
 
[35]
2019 | Journal Article | LibreCat-ID: 23831
E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3,” Physical Review Materials, 2019.
LibreCat | DOI
 
[34]
2019 | Journal Article | LibreCat-ID: 8646
M. Deppe et al., “Germanium doping of cubic GaN grown by molecular beam epitaxy,” Journal of Applied Physics, 2019.
LibreCat | DOI
 
[33]
2019 | Journal Article | LibreCat-ID: 13965
J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Optical excitation density dependence of spin dynamics in bulk cubic GaN,” Journal of Applied Physics, 2019.
LibreCat | DOI
 
[32]
2019 | Journal Article | LibreCat-ID: 13966
E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3,” Physical Review Materials, 2019.
LibreCat | DOI
 
[31]
2019 | Journal Article | LibreCat-ID: 15444 | OA
M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), Art. no. 1900532, 2019, doi: 10.1002/pssb.201900532.
LibreCat | DOI | Download (ext.)
 
[30]
2018 | Journal Article | LibreCat-ID: 4809
L. K. S. Herval, M. P. F. de Godoy, T. Wecker, and D. J. As, “Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures,” Journal of Luminescence, vol. 198, pp. 309–313, 2018.
LibreCat | DOI
 
[29]
2018 | Journal Article | LibreCat-ID: 7022
S. Blumenthal, D. Reuter, and D. J. As, “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 5, 2018.
LibreCat | DOI
 
[28]
2018 | Book Chapter | LibreCat-ID: 4350
D. J. As and K. Lischka, “Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications,” in Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.
LibreCat | DOI
 
[27]
2018 | Journal Article | LibreCat-ID: 20588
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As, “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 3, p. 1600729, 2018, doi: https://doi.org/10.1002/pssb.201600729.
LibreCat | DOI
 
[26]
2017 | Journal Article | LibreCat-ID: 4808
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells,” physica status solidi (b), vol. 255, no. 5, 2017.
LibreCat | DOI
 
[25]
2017 | Journal Article | LibreCat-ID: 4810
T. Wecker et al., “Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures,” Journal of Crystal Growth, vol. 477, pp. 149–153, 2017.
LibreCat | DOI
 
[24]
2017 | Journal Article | LibreCat-ID: 4811
M. Deppe, J. W. Gerlach, D. Reuter, and D. J. As, “Incorporation of germanium for n-type doping of cubic GaN,” physica status solidi (b), vol. 254, no. 8, 2017.
LibreCat | DOI
 
[23]
2017 | Journal Article | LibreCat-ID: 4812
T. Czerniuk et al., “Picosecond Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N,” Physical Review Applied, vol. 7, no. 1, 2017.
LibreCat | DOI
 
[22]
2017 | Journal Article | LibreCat-ID: 4813
D. J. As, M. Deppe, J. Gerlach, and D. Reuter, “Optical Properties of Germanium Doped Cubic GaN,” MRS Advances, vol. 2, no. 05, pp. 283–288, 2017.
LibreCat | DOI
 
[21]
2016 | Journal Article | LibreCat-ID: 4814
J. H. Buß, T. Schupp, D. J. As, O. Brandt, D. Hägele, and J. Rudolph, “Electron spin dynamics in cubic GaN,” Physical Review B, vol. 94, no. 23, 2016.
LibreCat | DOI
 
[20]
2016 | Journal Article | LibreCat-ID: 4815
V. A. N. Righetti et al., “Magnetic and structural properties of Fe-implanted cubic GaN,” Journal of Applied Physics, vol. 120, no. 10, 2016.
LibreCat | DOI
 
[19]
2016 | Journal Article | LibreCat-ID: 4817
C. Rothfuchs et al., “Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots,” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 383, pp. 1–5, 2016.
LibreCat | DOI
 
[18]
2016 | Journal Article | LibreCat-ID: 7055
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy,” Japanese Journal of Applied Physics, vol. 55, no. 5S, 2016.
LibreCat | DOI
 
[17]
2016 | Journal Article | LibreCat-ID: 3888
S. Blumenthal et al., “Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,” physica status solidi (c), vol. 13, no. 5–6, pp. 292–296, 2016, doi: 10.1002/pssc.201600010.
LibreCat | Files available | DOI
 
[16]
2016 | Journal Article | LibreCat-ID: 4240
M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” physica status solidi (b), vol. 253, no. 4, pp. 778–782, 2016, doi: 10.1002/pssb.201552592.
LibreCat | DOI
 
[15]
2015 | Journal Article | LibreCat-ID: 4819
S. Sergent et al., “Active zinc-blende III–nitride photonic structures on silicon,” Applied Physics Express, vol. 9, no. 1, 2015.
LibreCat | DOI
 
[14]
2015 | Journal Article | LibreCat-ID: 4820
J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Temperature dependence of the electron Landé g-factor in cubic GaN,” Journal of Applied Physics, vol. 118, no. 22, 2015.
LibreCat | DOI
 
[13]
2015 | Journal Article | LibreCat-ID: 4825
A. Schaefer et al., “Strain dependent electron spin dynamics in bulk cubic GaN,” Journal of Applied Physics, vol. 117, no. 9, 2015.
LibreCat | DOI
 
[12]
2015 | Journal Article | LibreCat-ID: 7217
T. Jostmeier, T. Wecker, D. Reuter, D. J. As, and M. Betz, “Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice,” Applied Physics Letters, vol. 107, no. 21, 2015.
LibreCat | DOI
 
[11]
2014 | Journal Article | LibreCat-ID: 4824
T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, and D. J. As, “Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells,” physica status solidi (b), vol. 252, no. 5, pp. 873–878, 2014.
LibreCat | DOI
 
[10]
2014 | Journal Article | LibreCat-ID: 8762
S. Sergent, S. Kako, M. Bürger, T. Schupp, D. J. As, and Y. Arakawa, “Polarization properties of single zinc-blende GaN/AlN quantum dots,” Physical Review B, 2014.
LibreCat | DOI
 
[9]
2014 | Journal Article | LibreCat-ID: 4064
L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt, “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures,” Materials Science Forum, vol. 778–780, pp. 730–733, 2014, doi: 10.4028/www.scientific.net/msf.778-780.730.
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2013 | Journal Article | LibreCat-ID: 3963 | OA
M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,” Applied Physics Letters, vol. 102, no. 8, p. 081105, 2013.
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2013 | Journal Article | LibreCat-ID: 13524
M. Landmann et al., “Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN,” Physical Review B, vol. 87, no. 19, 2013, doi: 10.1103/physrevb.87.195210.
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2012 | Journal Article | LibreCat-ID: 4333
M. Feneberg et al., “Optical properties of cubic GaN from 1 to 20 eV,” Physical Review B, vol. 85, no. 15, 2012.
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2012 | Journal Article | LibreCat-ID: 4116
L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt, “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures,” Materials Science Forum, vol. 717–720, pp. 901–904, 2012, doi: 10.4028/www.scientific.net/msf.717-720.901.
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2011 | Journal Article | LibreCat-ID: 13568
C. Mietze et al., “Band offsets in cubic GaN/AlN superlattices,” Physical Review B, vol. 83, no. 19, 2011.
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2011 | Journal Article | LibreCat-ID: 4146
R. Maria Kemper et al., “Anti-phase domains in cubic GaN,” Journal of Applied Physics, vol. 110, no. 12, Art. no. 123512, 2011, doi: 10.1063/1.3666050.
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2010 | Journal Article | LibreCat-ID: 13835
A. Scholle et al., “Magnetic characterization of conductance electrons in GaN,” physica status solidi (b), vol. 247, no. 7, pp. 1728–1731, 2010.
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2009 | Conference Paper | LibreCat-ID: 4218
D. J. As, E. Tschumak, I. Laubenstein, R. M. Kemper, and K. Lischka, “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers,” in Materials Research Society Symposium Proceedings, 2009, vol. 1108, pp. 3–8, doi: 10.1557/proc-1108-a01-02.
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