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379 Publications


2022 | Journal Article | LibreCat-ID: 35232
Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks
F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022).
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2022 | Journal Article | LibreCat-ID: 34056
Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A
T. Riedl, V.S. Kunnathully, A.K. Verma, T. Langer, D. Reuter, B. Büker, A. Hütten, J. Lindner, Journal of Applied Physics 132 (2022).
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2022 | Journal Article | LibreCat-ID: 34053
Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars
T. Riedl, V. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Advanced Materials Interfaces 9 (2022).
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2022 | Journal Article | LibreCat-ID: 36804
Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates
T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022).
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2022 | Conference Paper | LibreCat-ID: 41800
Scalable integration of quantum emitters into photonic integrated circuits
M. Sartison, O. Camacho Ibarra, K.D. Jöns, I. Caltzidis, D. Reuter, 2 (2022).
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2022 | Journal Article | LibreCat-ID: 40523
Nonlinear down-conversion in a single quantum dot
B. Jonas, D.F. Heinze, E. Schöll, P. Kallert, T. Langer, S. Krehs, A. Widhalm, K. Jöns, D. Reuter, S. Schumacher, A. Zrenner, Nature Communications 13 (2022).
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2022 | Research Data | LibreCat-ID: 40428
Nonlinear down-conversion in a single quantum dot
B. Jonas, D.F. Heinze, E. Schöll, P. Kallert, T. Langer, S. Krehs, A. Widhalm, K. Jöns, D. Reuter, A. Zrenner, Nonlinear Down-Conversion in a Single Quantum Dot, LibreCat University, 2022.
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2021 | Journal Article | LibreCat-ID: 20592 | OA
Selective Etching of (111)B-Oriented AlxGa1−xAs-Layers for Epitaxial Lift-Off
T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, D. Reuter, Physica Status Solidi (A) 218 (2021) 2000408.
LibreCat | DOI | Download (ext.)
 

2021 | Journal Article | LibreCat-ID: 22533
Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
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2021 | Journal Article | LibreCat-ID: 22003
Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation
E. Evers, N.E. Kopteva, I.A. Yugova, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, Npj Quantum Information (2021).
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2021 | Journal Article | LibreCat-ID: 22004
Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography
J. Schall, M. Deconinck, N. Bart, M. Florian, M. Helversen, C. Dangel, R. Schmidt, L. Bremer, F. Bopp, I. Hüllen, C. Gies, D. Reuter, A.D. Wieck, S. Rodt, J.J. Finley, F. Jahnke, A. Ludwig, S. Reitzenstein, Advanced Quantum Technologies (2021).
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2021 | Journal Article | LibreCat-ID: 27099
Optoelectronic sampling of ultrafast electric transients with single quantum dots
A. Widhalm, S. Krehs, D. Siebert, N.L. Sharma, T. Langer, B. Jonas, D. Reuter, A. Thiede, J. Förstner, A. Zrenner, Applied Physics Letters 119 (2021) 181109.
LibreCat | Files available | DOI
 

2021 | Journal Article | LibreCat-ID: 46135
Bright Electrically Controllable Quantum‐Dot‐Molecule Devices Fabricated by In Situ Electron‐Beam Lithography
J. Schall, M. Deconinck, N. Bart, M. Florian, M. Helversen, C. Dangel, R. Schmidt, L. Bremer, F. Bopp, I. Hüllen, C. Gies, D. Reuter, A.D. Wieck, S. Rodt, J.J. Finley, F. Jahnke, A. Ludwig, S. Reitzenstein, Advanced Quantum Technologies 4 (2021).
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2021 | Journal Article | LibreCat-ID: 25227 | OA
Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).
LibreCat | DOI | Download (ext.)
 

2021 | Journal Article | LibreCat-ID: 23843
Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 17433
Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
D.Q. Wang, D. Reuter, A.D. Wieck, A.R. Hamilton, O. Klochan, Applied Physics Letters (2020).
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 17434
InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Journal of Crystal Growth (2020).
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 17435
Electrostatic potential shape of gate-defined quantum point contacts
M. Geier, J. Freudenfeld, J.T. Silva, V. Umansky, D. Reuter, A.D. Wieck, P.W. Brouwer, S. Ludwig, Physical Review B (2020).
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2020 | Journal Article | LibreCat-ID: 17436
Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure
M. Javaid Iqbal, D. Reuter, A.D. Wieck, C. van der Wal, The European Physical Journal Applied Physics (2020).
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2020 | Journal Article | LibreCat-ID: 17437
Electrical detection of excitonic states by time-resolved conductance measurements
C. Ebler, P.A. Labud, A.K. Rai, D. Reuter, A.D. Wieck, A. Ludwig, Physical Review B (2020).
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 23841
Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).
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2020 | Journal Article | LibreCat-ID: 17995
Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings
C. Riha, S.S. Buchholz, O. Chiatti, A.D. Wieck, D. Reuter, S.F. Fischer, Applied Physics Letters (2020).
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2020 | Journal Article | LibreCat-ID: 21796
Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020).
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2020 | Journal Article | LibreCat-ID: 21797
Strain-driven InAs island growth on top of GaAs(111) nanopillars
T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Physical Review Materials (2020).
LibreCat | DOI
 

2020 | Journal Article | LibreCat-ID: 34093
Strain-driven InAs island growth on top of GaAs(111) nanopillars
T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Physical Review Materials 4 (2020).
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2020 | Journal Article | LibreCat-ID: 34091
InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J. Lindner, Journal of Crystal Growth 537 (2020).
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2020 | Journal Article | LibreCat-ID: 17322
Electrically controlled rapid adiabatic passage in a single quantum dot
A. Mukherjee, A. Widhalm, D. Siebert, S. Krehs, N. Sharma, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 116 (2020) 251103.
LibreCat | Files available | DOI
 

2020 | Conference Abstract | LibreCat-ID: 39966
Ultrafast electric control of a single QD exciton
J. Förstner, A. Widhalm, A. Mukherjee, S. Krehs, B. Jonas, K. Spychala, J. Förstner, A. Thiede, D. Reuter, A. Zrenner, in: 11th International Conference on Quantum Dots, Munich/Germany, 2020.
LibreCat
 

2019 | Journal Article | LibreCat-ID: 7800
Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B
T. Henksmeier, S. Shvarkov, A. Trapp, D. Reuter, Journal of Crystal Growth 512 (2019) 164–168.
LibreCat | DOI
 

2019 | Journal Article | LibreCat-ID: 8646
Germanium doping of cubic GaN grown by molecular beam epitaxy
M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).
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2019 | Journal Article | LibreCat-ID: 15444 | OA
Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).
LibreCat | DOI | Download (ext.)
 

2018 | Conference Paper | LibreCat-ID: 4413
Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.
LibreCat
 

2018 | Conference Paper | LibreCat-ID: 4414
MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.
LibreCat
 

2018 | Journal Article | LibreCat-ID: 7008
Decay and revival of electron spin polarization in an ensemble of (In,Ga)As quantum dots
E. Evers, V.V. Belykh, N.E. Kopteva, I.A. Yugova, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B 98 (2018).
LibreCat | DOI
 

2018 | Journal Article | LibreCat-ID: 7009
Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).
LibreCat | DOI
 

2018 | Journal Article | LibreCat-ID: 7010
Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures
J. Debus, D. Kudlacik, V.F. Sapega, T.S. Shamirzaev, D.R. Yakovlev, D. Reuter, A.D. Wieck, A. Waag, M. Bayer, Physics of the Solid State 60 (2018) 1611–1617.
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2018 | Journal Article | LibreCat-ID: 7018
Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates
A. Trapp, D. Reuter, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).
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2018 | Journal Article | LibreCat-ID: 7019
Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks
V. Zolatanosha, D. Reuter, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).
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2018 | Journal Article | LibreCat-ID: 7021
Spin inertia of resident and photoexcited carriers in singly charged quantum dots
E.A. Zhukov, E. Kirstein, D.S. Smirnov, D.R. Yakovlev, M.M. Glazov, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, Physical Review B 98 (2018).
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2018 | Journal Article | LibreCat-ID: 7022
Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).
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2018 | Journal Article | LibreCat-ID: 6505
Theory of spin inertia in singly charged quantum dots
D.S. Smirnov, E.A. Zhukov, E. Kirstein, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, M.M. Glazov, Physical Review B 98 (2018).
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2018 | Journal Article | LibreCat-ID: 3427
Ultrafast electric phase control of a single exciton qubit
A. Widhalm, A. Mukherjee, S. Krehs, N. Sharma, P. Kölling, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 112 (2018) 111105.
LibreCat | Files available | DOI
 

2018 | Journal Article | LibreCat-ID: 20588
Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.
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2017 | Journal Article | LibreCat-ID: 4808
Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).
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2017 | Journal Article | LibreCat-ID: 4810
Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures
T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter, D.J. As, Journal of Crystal Growth 477 (2017) 149–153.
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2017 | Journal Article | LibreCat-ID: 4811
Incorporation of germanium for n-type doping of cubic GaN
M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) 254 (2017).
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2017 | Journal Article | LibreCat-ID: 4813
Optical Properties of Germanium Doped Cubic GaN
D.J. As, M. Deppe, J. Gerlach, D. Reuter, MRS Advances 2 (2017) 283–288.
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2017 | Journal Article | LibreCat-ID: 7020
Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 481 (2017) 7–10.
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2017 | Journal Article | LibreCat-ID: 7026
Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures
V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.
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2017 | Journal Article | LibreCat-ID: 7027
Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy
S. Scholz, R. Schott, P.A. Labud, C. Somsen, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 470 (2017) 46–50.
LibreCat | DOI
 

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