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14 Publications
2020 | Journal Article | LibreCat-ID: 21796
Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Two-Dimensional Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.” Semiconductor Science and Technology, 2020. https://doi.org/10.1088/1361-6641/ab89e1.
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2019 | Journal Article | LibreCat-ID: 12930
Köthemann, Ronja, Nils Weber, Jörg K N Lindner, and Cedrik Meier. “High-Precision Determination of Silicon Nanocrystals: Optical Spectroscopy versus Electron Microscopy.” Semiconductor Science and Technology 34, no. 9 (2019). https://doi.org/10.1088/1361-6641/ab3536.
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2018 | Journal Article | LibreCat-ID: 19215
Kandemir, A, B Akbali, Z Kahraman, S V Badalov, M Ozcan, F Iyikanat, and H Sahin. “Structural, Electronic and Phononic Properties of PtSe2: From Monolayer to Bulk.” Semiconductor Science and Technology, 2018. https://doi.org/10.1088/1361-6641/aacba2.
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2018 | Journal Article | LibreCat-ID: 7009
Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Interlayer Charge Transfer in N-Modulation Doped Al1−x Ga x As–GaAs Single Heterostructures.” Semiconductor Science and Technology 33, no. 9 (2018). https://doi.org/10.1088/1361-6641/aad83d.
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2013 | Journal Article | LibreCat-ID: 7282
Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” Semiconductor Science and Technology 28, no. 8 (2013). https://doi.org/10.1088/0268-1242/28/8/085012.
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2013 | Journal Article | LibreCat-ID: 7295
Koop, E J, M J Iqbal, F Limbach, M Boute, B J van Wees, Dirk Reuter, A D Wieck, B J Kooi, and C H van der Wal. “On the Annealing Mechanism of AuGe/Ni/Au Ohmic Contacts to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.” Semiconductor Science and Technology 28, no. 2 (2013). https://doi.org/10.1088/0268-1242/28/2/025006.
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2011 | Journal Article | LibreCat-ID: 4545
Wiedemeier, V, Gerhard Berth, Artur Zrenner, E M Larramendi, U Woggon, K Lischka, and D Schikora. “In Situ Characterization of ZnTe Epilayer Irradiation via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” Semiconductor Science and Technology 26, no. 10 (2011). https://doi.org/10.1088/0268-1242/26/10/105023.
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2010 | Journal Article | LibreCat-ID: 4549
Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner, U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” Semiconductor Science and Technology 25, no. 7 (2010). https://doi.org/10.1088/0268-1242/25/7/075003.
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2005 | Journal Article | LibreCat-ID: 8693
Knop, M, M Richter, R Maßmann, U Wieser, U Kunze, Dirk Reuter, C Riedesel, and A D Wieck. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs Using Negative-Tone Resist Calixarene.” Semiconductor Science and Technology, 2005, 814–18. https://doi.org/10.1088/0268-1242/20/8/031.
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2004 | Journal Article | LibreCat-ID: 8692
Kähler, D, M Knop, U Kunze, Dirk Reuter, and A D Wieck. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable Subband Energy Separation.” Semiconductor Science and Technology, 2004, 140–43. https://doi.org/10.1088/0268-1242/20/2/006.
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2003 | Journal Article | LibreCat-ID: 8730
Apetrii, G, S F Fischer, U Kunze, Dirk Reuter, and A D Wieck. “Influence of Processing Parameters on the Transport Properties of Quantum Point Contacts Fabricated with an Atomic Force Microscope.” Semiconductor Science and Technology, 2003, 735–39. https://doi.org/10.1088/0268-1242/17/7/317.
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2002 | Journal Article | LibreCat-ID: 7684
Reuter, D, Cedrik Meier, C Riedesel, and A D Wieck. “Local Two-Dimensional Electron Gas Formation in p-Doped GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures by Focused Si-Implantation Doping.” Semiconductor Science and Technology 17, no. 6 (2002): 585–89. https://doi.org/10.1088/0268-1242/17/6/315.
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2002 | Journal Article | LibreCat-ID: 8747
Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314.
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2002 | Journal Article | LibreCat-ID: 8768
Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314.
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