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148 Publications


2007 | Journal Article | LibreCat-ID: 39759
Kitzerow H-S, Lorenz A, Matthias H. Tuneable photonic crystals obtained by liquid crystal infiltration. physica status solidi (a). 2007;204(11):3754-3767. doi:10.1002/pssa.200776404
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2007 | Journal Article | LibreCat-ID: 39563
Jiang J, Hilleringmann U, Shui X. Electro-thermo-mechanical analytical modeling of multilayer cantilever microactuator. Sensors and Actuators A: Physical. 2007;137(2):302-307. doi:10.1016/j.sna.2007.03.012
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2007 | Journal Article | LibreCat-ID: 29679
Schmalhorst J, Ebke D, Sacher M, et al. Chemical and Magnetic Interface Properties of Tunnel Junctions With Co$_2$MnSi/Co$_2$FeSi Multilayer Electrode Showing Large Tunneling Magnetoresistance. IEEE Transactions on Magnetics. 2007;43(6):2806-2808. doi:10.1109/tmag.2007.893475
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2004 | Journal Article | LibreCat-ID: 29924
Amann N, Böcker J, Prenner F. Active Damping of Drive Train Oscillations for an Electrically Driven Vehicle. IEEE/ASME Transactions on Mechatronics. 2004;9(4):697-700. doi:10.1109/tmech.2004.839036
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2003 | Journal Article | LibreCat-ID: 39851
Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering. 2003;67-68:845-852. doi:10.1016/s0167-9317(03)00146-1
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2002 | Journal Article | LibreCat-ID: 29998
Böcker J, Janning J, Jebenstreit H. High dynamic control of a three-level voltage-source-converter drive for a main strip mill. IEEE Transactions on Industrial Electronics. 2002;49(5):1081-1092. doi:10.1109/tie.2002.803220
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2002 | Journal Article | LibreCat-ID: 39904
Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. IEEE Transactions on Electron Devices. 2002;42(5):841-846. doi:10.1109/16.381978
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2002 | Journal Article | LibreCat-ID: 39912
Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering. 2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j
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2002 | Journal Article | LibreCat-ID: 39914
Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q
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2002 | Journal Article | LibreCat-ID: 39906
Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714
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2002 | Journal Article | LibreCat-ID: 39907
Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 39899
Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4
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2002 | Journal Article | LibreCat-ID: 39925
Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985
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2002 | Journal Article | LibreCat-ID: 39882
Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1
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2002 | Journal Article | LibreCat-ID: 39879
Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9
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2002 | Journal Article | LibreCat-ID: 39919
Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2
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2002 | Journal Article | LibreCat-ID: 39926
Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985
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2002 | Journal Article | LibreCat-ID: 39920
Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering. 2002;15(1-4):633-636. doi:10.1016/0167-9317(91)90299-s
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2002 | Journal Article | LibreCat-ID: 39915
Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 39916
Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering. 2002;19(1-4):191-194. doi:10.1016/0167-9317(92)90420-v
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2002 | Journal Article | LibreCat-ID: 39348
Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices. 2002;45(1):299-306. doi:10.1109/16.658845
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2002 | Journal Article | LibreCat-ID: 39889
Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering. 2002;46(1-4):413-417. doi:10.1016/s0167-9317(99)00122-7
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2002 | Journal Article | LibreCat-ID: 39891
Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices. 2002;45(1):299-306. doi:10.1109/16.658845
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2002 | Journal Article | LibreCat-ID: 39886
Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. Solid-State Electronics. 2002;43(7):1245-1250. doi:10.1016/s0038-1101(99)00060-x
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2002 | Journal Article | LibreCat-ID: 39876
Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. Diamond and Related Materials. 2002;10(3-7):511-514. doi:10.1016/s0925-9635(01)00373-9
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2002 | Journal Article | LibreCat-ID: 39877
Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering. 2002;53(1-4):569-572. doi:10.1016/s0167-9317(00)00380-4
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2002 | Journal Article | LibreCat-ID: 39874
Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. Diamond and Related Materials. 2002;11(3-6):841-844. doi:10.1016/s0925-9635(01)00703-8
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1995 | Journal Article | LibreCat-ID: 30050
Grotstollen H, Wiesing J. Torque capability and control of a saturated induction motor over a wide range of flux weakening. IEEE Transactions on Industrial Electronics. 1995;42(4):374-381. doi:10.1109/41.402476
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