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124 Publications
2002 | Journal Article | LibreCat-ID: 39912
Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering. 2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j
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2002 | Journal Article | LibreCat-ID: 39914
Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q
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2002 | Journal Article | LibreCat-ID: 39899
Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4
LibreCat
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2002 | Journal Article | LibreCat-ID: 39882
Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1
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2002 | Journal Article | LibreCat-ID: 39879
Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9
LibreCat
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2002 | Journal Article | LibreCat-ID: 39919
Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2
LibreCat
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2002 | Journal Article | LibreCat-ID: 39920
Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering. 2002;15(1-4):633-636. doi:10.1016/0167-9317(91)90299-s
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2002 | Journal Article | LibreCat-ID: 39915
Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q
LibreCat
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2002 | Journal Article | LibreCat-ID: 39916
Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering. 2002;19(1-4):191-194. doi:10.1016/0167-9317(92)90420-v
LibreCat
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2002 | Journal Article | LibreCat-ID: 39348
Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices. 2002;45(1):299-306. doi:10.1109/16.658845
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2002 | Journal Article | LibreCat-ID: 39889
Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering. 2002;46(1-4):413-417. doi:10.1016/s0167-9317(99)00122-7
LibreCat
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2002 | Journal Article | LibreCat-ID: 39891
Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices. 2002;45(1):299-306. doi:10.1109/16.658845
LibreCat
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2002 | Journal Article | LibreCat-ID: 39886
Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. Solid-State Electronics. 2002;43(7):1245-1250. doi:10.1016/s0038-1101(99)00060-x
LibreCat
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2002 | Journal Article | LibreCat-ID: 39876
Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. Diamond and Related Materials. 2002;10(3-7):511-514. doi:10.1016/s0925-9635(01)00373-9
LibreCat
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2002 | Journal Article | LibreCat-ID: 39877
Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering. 2002;53(1-4):569-572. doi:10.1016/s0167-9317(00)00380-4
LibreCat
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2002 | Journal Article | LibreCat-ID: 39874
Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. Diamond and Related Materials. 2002;11(3-6):841-844. doi:10.1016/s0925-9635(01)00703-8
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2000 | Journal Article | LibreCat-ID: 40083
Glossmann J, Hoischen A, Roder T, Kitzerow H-S. Asymmetric switching and storage effects in ferroelectric and antiferroelectric gels and polymers. Ferroelectrics. 2000;243(1):95-106. doi:10.1080/00150190008008011
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1999 | Journal Article | LibreCat-ID: 40223
Buey J, Espinet P, Kitzerow H-S, Strauss J. Metallomesogens presenting blue phases in a glassy state and in metallomesogen/nematic mixtures. Chemical Communications. 1999;(5):441-442. doi:10.1039/a900374f
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1996 | Journal Article | LibreCat-ID: 40081
Kitzerow H-S, Slaney AJ, Goodby JW. Electric field-induced transition from the twist grain boundary TGBAphase to the tilted smectic SmC* phase. Ferroelectrics. 1996;179(1):61-80. doi:10.1080/00150199608007874
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1994 | Journal Article | LibreCat-ID: 35384
Kratzat K, Schmidt C, Finkelmann H. A Doubly Branched Nonionic Oligooxyethylene V-Amphiphile: Effect of Molecular Geometry on Liquid-Crystalline Phase Behavior, 3. Journal of Colloid and Interface Science. 1994;163(1):190-198. doi:10.1006/jcis.1994.1095
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