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124 Publications
2002 | Journal Article | LibreCat-ID: 39912
I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” Microelectronic Engineering, vol. 21, no. 1–4, pp. 363–366, 2002, doi: 10.1016/0167-9317(93)90092-j.
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2002 | Journal Article | LibreCat-ID: 39914
U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” Microelectronic Engineering, vol. 19, no. 1–4, pp. 211–214, 2002, doi: 10.1016/0167-9317(92)90425-q.
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2002 | Journal Article | LibreCat-ID: 39899
J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” Microelectronic Engineering, vol. 30, no. 1–4, pp. 431–434, 2002, doi: 10.1016/0167-9317(95)00280-4.
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2002 | Journal Article | LibreCat-ID: 39882
V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 525–528, 2002, doi: 10.1016/s0167-9317(00)00370-1.
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2002 | Journal Article | LibreCat-ID: 39879
J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 213–216, 2002, doi: 10.1016/s0167-9317(00)00299-9.
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2002 | Journal Article | LibreCat-ID: 39919
U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,” Microelectronic Engineering, vol. 15, no. 1–4, pp. 289–292, 2002, doi: 10.1016/0167-9317(91)90231-2.
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2002 | Journal Article | LibreCat-ID: 39920
A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” Microelectronic Engineering, vol. 15, no. 1–4, pp. 633–636, 2002, doi: 10.1016/0167-9317(91)90299-s.
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2002 | Journal Article | LibreCat-ID: 39915
U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” Microelectronic Engineering, vol. 19, no. 1–4, pp. 211–214, 2002, doi: 10.1016/0167-9317(92)90425-q.
LibreCat
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2002 | Journal Article | LibreCat-ID: 39916
S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” Microelectronic Engineering, vol. 19, no. 1–4, pp. 191–194, 2002, doi: 10.1016/0167-9317(92)90420-v.
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2002 | Journal Article | LibreCat-ID: 39348
J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 299–306, 2002, doi: 10.1109/16.658845.
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2002 | Journal Article | LibreCat-ID: 39889
V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded light triggered switch on one silicon chip,” Microelectronic Engineering, vol. 46, no. 1–4, pp. 413–417, 2002, doi: 10.1016/s0167-9317(99)00122-7.
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2002 | Journal Article | LibreCat-ID: 39891
J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 299–306, 2002, doi: 10.1109/16.658845.
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2002 | Journal Article | LibreCat-ID: 39886
G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport phenomena in ultrashort channel MOSFETs,” Solid-State Electronics, vol. 43, no. 7, pp. 1245–1250, 2002, doi: 10.1016/s0038-1101(99)00060-x.
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2002 | Journal Article | LibreCat-ID: 39876
R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,” Diamond and Related Materials, vol. 10, no. 3–7, pp. 511–514, 2002, doi: 10.1016/s0925-9635(01)00373-9.
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2002 | Journal Article | LibreCat-ID: 39877
U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 569–572, 2002, doi: 10.1016/s0167-9317(00)00380-4.
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2002 | Journal Article | LibreCat-ID: 39874
R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for piezoresistive pressure sensors,” Diamond and Related Materials, vol. 11, no. 3–6, pp. 841–844, 2002, doi: 10.1016/s0925-9635(01)00703-8.
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2000 | Journal Article | LibreCat-ID: 40083
J. Glossmann, A. Hoischen, T. Roder, and H.-S. Kitzerow, “Asymmetric switching and storage effects in ferroelectric and antiferroelectric gels and polymers,” Ferroelectrics, vol. 243, no. 1, pp. 95–106, 2000, doi: 10.1080/00150190008008011.
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1999 | Journal Article | LibreCat-ID: 40223
J. Buey, P. Espinet, H.-S. Kitzerow, and J. Strauss, “Metallomesogens presenting blue phases in a glassy state and in metallomesogen/nematic mixtures,” Chemical Communications, no. 5, pp. 441–442, 1999, doi: 10.1039/a900374f.
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1996 | Journal Article | LibreCat-ID: 40081
H.-S. Kitzerow, A. J. Slaney, and J. W. Goodby, “Electric field-induced transition from the twist grain boundary TGBAphase to the tilted smectic SmC* phase,” Ferroelectrics, vol. 179, no. 1, pp. 61–80, 1996, doi: 10.1080/00150199608007874.
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1994 | Journal Article | LibreCat-ID: 35384
K. Kratzat, C. Schmidt, and H. Finkelmann, “A Doubly Branched Nonionic Oligooxyethylene V-Amphiphile: Effect of Molecular Geometry on Liquid-Crystalline Phase Behavior, 3,” Journal of Colloid and Interface Science, vol. 163, no. 1, pp. 190–198, 1994, doi: 10.1006/jcis.1994.1095.
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