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14 Publications
2020 | Journal Article | LibreCat-ID: 21796
Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020).
LibreCat
| DOI
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020).
2019 | Journal Article | LibreCat-ID: 12930
High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy
R. Köthemann, N. Weber, J.K.N. Lindner, C. Meier, Semiconductor Science and Technology 34 (2019).
LibreCat
| DOI
R. Köthemann, N. Weber, J.K.N. Lindner, C. Meier, Semiconductor Science and Technology 34 (2019).
2018 | Journal Article | LibreCat-ID: 19215
Structural, electronic and phononic properties of PtSe2: from monolayer to bulk
A. Kandemir, B. Akbali, Z. Kahraman, S.V. Badalov, M. Ozcan, F. Iyikanat, H. Sahin, Semiconductor Science and Technology (2018).
LibreCat
| DOI
A. Kandemir, B. Akbali, Z. Kahraman, S.V. Badalov, M. Ozcan, F. Iyikanat, H. Sahin, Semiconductor Science and Technology (2018).
2018 | Journal Article | LibreCat-ID: 7009
Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).
LibreCat
| DOI
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).
2013 | Journal Article | LibreCat-ID: 7282
Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).
LibreCat
| DOI
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).
2013 | Journal Article | LibreCat-ID: 7295
On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures
E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D. Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology 28 (2013).
LibreCat
| DOI
E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D. Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology 28 (2013).
2011 | Journal Article | LibreCat-ID: 4545
In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy
V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora, Semiconductor Science and Technology 26 (2011).
LibreCat
| DOI
V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora, Semiconductor Science and Technology 26 (2011).
2010 | Journal Article | LibreCat-ID: 4549
Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).
LibreCat
| DOI
E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).
2005 | Journal Article | LibreCat-ID: 8693
Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene
M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.
LibreCat
| DOI
M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.
2004 | Journal Article | LibreCat-ID: 8692
Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation
D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.
LibreCat
| DOI
D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.
2003 | Journal Article | LibreCat-ID: 8730
Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope
G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2003) 735–739.
LibreCat
| DOI
G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2003) 735–739.
2002 | Journal Article | LibreCat-ID: 7684
Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping
D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology 17 (2002) 585–589.
LibreCat
| DOI
D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology 17 (2002) 585–589.
2002 | Journal Article | LibreCat-ID: 8747
Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat
| DOI
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
2002 | Journal Article | LibreCat-ID: 8768
Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat
| DOI
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.