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12 Publications


2019 | Journal Article | LibreCat-ID: 12930
Köthemann, R., Weber, N., Lindner, J. K. N., & Meier, C. (2019). High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy. Semiconductor Science and Technology, 34(9). https://doi.org/10.1088/1361-6641/ab3536
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2018 | Journal Article | LibreCat-ID: 7009
Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2018). Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology, 33(9). https://doi.org/10.1088/1361-6641/aad83d
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2013 | Journal Article | LibreCat-ID: 7282
Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2013). Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology, 28(8). https://doi.org/10.1088/0268-1242/28/8/085012
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2013 | Journal Article | LibreCat-ID: 7295
Koop, E. J., Iqbal, M. J., Limbach, F., Boute, M., van Wees, B. J., Reuter, D., … van der Wal, C. H. (2013). On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures. Semiconductor Science and Technology, 28(2). https://doi.org/10.1088/0268-1242/28/2/025006
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2011 | Journal Article | LibreCat-ID: 4545
Wiedemeier, V., Berth, G., Zrenner, A., Larramendi, E. M., Woggon, U., Lischka, K., & Schikora, D. (2011). In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor Science and Technology, 26(10). https://doi.org/10.1088/0268-1242/26/10/105023
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2010 | Journal Article | LibreCat-ID: 4549
Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon, U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology, 25(7). https://doi.org/10.1088/0268-1242/25/7/075003
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2005 | Journal Article | LibreCat-ID: 8693
Knop, M., Richter, M., Maßmann, R., Wieser, U., Kunze, U., Reuter, D., … Wieck, A. D. (2005). Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science and Technology, 814–818. https://doi.org/10.1088/0268-1242/20/8/031
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2004 | Journal Article | LibreCat-ID: 8692
Kähler, D., Knop, M., Kunze, U., Reuter, D., & Wieck, A. D. (2004). Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology, 140–143. https://doi.org/10.1088/0268-1242/20/2/006
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2003 | Journal Article | LibreCat-ID: 8730
Apetrii, G., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2003). Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. Semiconductor Science and Technology, 735–739. https://doi.org/10.1088/0268-1242/17/7/317
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2002 | Journal Article | LibreCat-ID: 8768
Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
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2002 | Journal Article | LibreCat-ID: 7684
Reuter, D., Meier, C., Riedesel, C., & Wieck, A. D. (2002). Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology, 17(6), 585–589. https://doi.org/10.1088/0268-1242/17/6/315
LibreCat | DOI
 

2002 | Journal Article | LibreCat-ID: 8747
Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
LibreCat | DOI
 

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