Dirk Reuter
Department Physik
Center for Optoelectronics and Photonics (CeOPP)
dirk.reuter@uni-paderborn.deID
383 Publications
2004 | Journal Article | LibreCat-ID: 8697
C. Riedesel, D. Reuter, and A. . Wieck, “Laterally patterned high mobility two-dimensional electron gases obtained by overgrowth of focused ion beam implanted Al1−xGaxAs,” Physica E: Low-dimensional Systems and Nanostructures, pp. 592–596, 2004.
LibreCat
| DOI
2004 | Journal Article | LibreCat-ID: 8699
D. Reuter, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure,” Physica E: Low-dimensional Systems and Nanostructures, pp. 872–875, 2004.
LibreCat
| DOI
2004 | Journal Article | LibreCat-ID: 8701
D. Reuter, C. Werner, C. Riedesel, A. D. Wieck, D. Schuster, and W. Hansen, “Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures,” Physica E: Low-dimensional Systems and Nanostructures, pp. 725–728, 2004.
LibreCat
| DOI
2003 | Journal Article | LibreCat-ID: 8730
G. Apetrii, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope,” Semiconductor Science and Technology, pp. 735–739, 2003.
LibreCat
| DOI
2002 | Journal Article | LibreCat-ID: 8784
D. Sander, A. Enders, C. Schmidthals, D. Reuter, and J. Kirschner, “Stranski-Krastanov layers of Fe on W(1 1 0): A combined MOKE, LEED, SAM and stress measurement investigation,” Journal of Magnetism and Magnetic Materials, pp. 1299–1300, 2002.
LibreCat
| DOI
383 Publications
2004 | Journal Article | LibreCat-ID: 8697
C. Riedesel, D. Reuter, and A. . Wieck, “Laterally patterned high mobility two-dimensional electron gases obtained by overgrowth of focused ion beam implanted Al1−xGaxAs,” Physica E: Low-dimensional Systems and Nanostructures, pp. 592–596, 2004.
LibreCat
| DOI
2004 | Journal Article | LibreCat-ID: 8699
D. Reuter, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure,” Physica E: Low-dimensional Systems and Nanostructures, pp. 872–875, 2004.
LibreCat
| DOI
2004 | Journal Article | LibreCat-ID: 8701
D. Reuter, C. Werner, C. Riedesel, A. D. Wieck, D. Schuster, and W. Hansen, “Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures,” Physica E: Low-dimensional Systems and Nanostructures, pp. 725–728, 2004.
LibreCat
| DOI
2003 | Journal Article | LibreCat-ID: 8730
G. Apetrii, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope,” Semiconductor Science and Technology, pp. 735–739, 2003.
LibreCat
| DOI
2002 | Journal Article | LibreCat-ID: 8784
D. Sander, A. Enders, C. Schmidthals, D. Reuter, and J. Kirschner, “Stranski-Krastanov layers of Fe on W(1 1 0): A combined MOKE, LEED, SAM and stress measurement investigation,” Journal of Magnetism and Magnetic Materials, pp. 1299–1300, 2002.
LibreCat
| DOI