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40 Publications
2006 | Conference Paper | LibreCat-ID: 39842
Pannemann C, Diekmann T, Hilleringmann U, et al. Encapsulating the active Layer of organic Thin-Film Transistors. In: Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics. IEEE; 2006. doi:10.1109/polytr.2005.1596488
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2005 | Journal Article | LibreCat-ID: 39846
Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect transistors made of pentacene. Journal of Materials Research. 2005;19(7):1999-2002. doi:10.1557/jmr.2004.0267
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2005 | Conference Paper | LibreCat-ID: 39848
Pannemann Ch, Diekmann T, Hilleringmann U. On the degradation of organic field-effect transistors. In: Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. IEEE; 2005. doi:10.1109/icm.2004.1434210
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2005 | Journal Article | LibreCat-ID: 39349
Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect transistors made of pentacene. Journal of Materials Research. 2005;19(7):1999-2002. doi:10.1557/jmr.2004.0267
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2005 | Journal Article | LibreCat-ID: 39574
Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. Applied Physics Letters. 2005;86(2). doi:10.1063/1.1849845
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2005 | Conference Paper | LibreCat-ID: 39835
Scholz R, Müller A-D, Müller F, et al. Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In: Bao Z, Gundlach DJ, eds. SPIE Proceedings. SPIE; 2005. doi:10.1117/12.617004
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2005 | Conference Paper | LibreCat-ID: 39834
Scholz R, Müller A-D, Müller F, et al. Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In: Bao Z, Gundlach DJ, eds. SPIE Proceedings. SPIE; 2005. doi:10.1117/12.617004
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2004 | Book Chapter | LibreCat-ID: 39850
Hilleringmann U. Ätztechnik. In: Silizium-Halbleitertechnologie. Vieweg+Teubner Verlag; 2004:65–90. doi:10.1007/978-3-322-94072-8_5
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2004 | Conference Paper | LibreCat-ID: 39872
Hilleringmann U, Pannemann C. Imprint structured organic thin film transistors as driving circuit in single-use sensor applications. In: Zhang G, Zhao H, Wang Z, eds. Fifth International Symposium on Instrumentation and Control Technology. SPIE; 2004. doi:10.1117/12.521463
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2004 | Conference Paper | LibreCat-ID: 39873
Otterbach R, Hilleringmann U. Piezoresistive pressure sensors in CVD diamond for high-temperature applications. In: Zhang G, Zhao H, Wang Z, eds. Fifth International Symposium on Instrumentation and Control Technology. SPIE; 2004. doi:10.1117/12.521928
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2003 | Conference Paper | LibreCat-ID: 39887
Hilleringmann U, Vieregge T, Horstmann JT. Masking and etching of silicon and related materials for geometries down to 25 nm. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE; 2003. doi:10.1109/iecon.1999.822171
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2003 | Conference Paper | LibreCat-ID: 39888
Horstmann JT, Hilleringmann U, Goser K. Matching analysis of NMOS-transistors with a channel length down to 30 nm. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE; 2003. doi:10.1109/iecon.1999.822163
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2003 | Conference Paper | LibreCat-ID: 39885
Wirth G, Hilleringmann U, Horstmann JT, Goser K. Negative differential resistance in ultrashort bulk MOSFETs. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029). IEEE; 2003. doi:10.1109/iecon.1999.822164
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2003 | Journal Article | LibreCat-ID: 39851
Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering. 2003;67-68:845-852. doi:10.1016/s0167-9317(03)00146-1
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2002 | Journal Article | LibreCat-ID: 39904
Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. IEEE Transactions on Electron Devices. 2002;42(5):841-846. doi:10.1109/16.381978
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2002 | Journal Article | LibreCat-ID: 39912
Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering. 2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j
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2002 | Journal Article | LibreCat-ID: 39914
Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q
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2002 | Journal Article | LibreCat-ID: 39906
Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714
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2002 | Journal Article | LibreCat-ID: 39907
Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714
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2002 | Journal Article | LibreCat-ID: 39899
Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4
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2002 | Journal Article | LibreCat-ID: 39925
Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985
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2002 | Journal Article | LibreCat-ID: 39882
Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering. 2002;53(1-4):525-528. doi:10.1016/s0167-9317(00)00370-1
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2002 | Journal Article | LibreCat-ID: 39879
Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering. 2002;53(1-4):213-216. doi:10.1016/s0167-9317(00)00299-9
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2002 | Conference Paper | LibreCat-ID: 39880
Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE; 2002. doi:10.1109/iecon.2000.972560
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2002 | Conference Paper | LibreCat-ID: 39881
Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141). IEEE; 2002. doi:10.1109/iecon.2000.972560
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2002 | Journal Article | LibreCat-ID: 39919
Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering. 2002;15(1-4):289-292. doi:10.1016/0167-9317(91)90231-2
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2002 | Journal Article | LibreCat-ID: 39926
Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. IEEE Micro. 2002;9(6):28-44. doi:10.1109/40.42985
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2002 | Conference Paper | LibreCat-ID: 39892
Blum F, Denisenko A, Job R, et al. Nuclear radiation detectors on various type diamonds. In: IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200). IEEE; 2002. doi:10.1109/iecon.1998.724097
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2002 | Journal Article | LibreCat-ID: 39920
Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. Microelectronic Engineering. 2002;15(1-4):633-636. doi:10.1016/0167-9317(91)90299-s
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2002 | Journal Article | LibreCat-ID: 39915
Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q
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2002 | Journal Article | LibreCat-ID: 39916
Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering. 2002;19(1-4):191-194. doi:10.1016/0167-9317(92)90420-v
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2002 | Journal Article | LibreCat-ID: 39348
Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices. 2002;45(1):299-306. doi:10.1109/16.658845
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2002 | Conference Paper | LibreCat-ID: 39923
Goser K, Hilleringmann U, Rueckert U. Applications and implementations of neural networks in microelectronics-overview and status. In: [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications. IEEE Comput. Soc. Press; 2002. doi:10.1109/cmpeur.1991.257442
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2002 | Journal Article | LibreCat-ID: 39889
Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. Microelectronic Engineering. 2002;46(1-4):413-417. doi:10.1016/s0167-9317(99)00122-7
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2002 | Journal Article | LibreCat-ID: 39891
Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices. 2002;45(1):299-306. doi:10.1109/16.658845
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2002 | Journal Article | LibreCat-ID: 39886
Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. Solid-State Electronics. 2002;43(7):1245-1250. doi:10.1016/s0038-1101(99)00060-x
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2002 | Journal Article | LibreCat-ID: 39876
Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. Diamond and Related Materials. 2002;10(3-7):511-514. doi:10.1016/s0925-9635(01)00373-9
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2002 | Journal Article | LibreCat-ID: 39877
Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering. 2002;53(1-4):569-572. doi:10.1016/s0167-9317(00)00380-4
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2002 | Journal Article | LibreCat-ID: 39874
Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. Diamond and Related Materials. 2002;11(3-6):841-844. doi:10.1016/s0925-9635(01)00703-8
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2002 | Book Chapter | LibreCat-ID: 39875
Hilleringmann U. Metallisierung und Kontakte. In: Silizium-Halbleitertechnologie. Vieweg+Teubner Verlag; 2002:131–151. doi:10.1007/978-3-322-94119-0_8
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